同时具有亚波长限制光的光刻定义量子点

George Kountouris, Lea Vestergaard, Anne Sofie Darket, J. Mørk, P. Kristensen
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引用次数: 0

摘要

光学器件中量子点的确定性制造是未来集成光子学和电子学应用的长期挑战。目前的方法通常依赖于对齐或转移技术[1],但可扩展性受到不可避免地引入的几何形状和点的定位不确定性的限制。在这项工作中,我们提出了一个光刻定义的量子点与具有亚波长限制的光的纳米结构光学腔集成。该设计基于在InP介电膜中嵌入InGaAsP量子阱的光学领结腔[2]。通过改变中心领结的几何形状,可以使该结构在光学热点区域支持局域电子空穴态。这个概念如图1所示。
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A Lithographically Defined Quantum Dot with Simultaneous Sub-Wavelength Confinement of Light
Deterministic fabrication of quantum dots in optical devices is a long-standing challenge for future integrated photonics and electronics applications. Current approaches typically rely on alignment or transfer techniques [1], but the scalability is limited by the unavoidable introduction of uncertainty in both the geometry and the positioning of the dots. In this work, we present a lithographically defined quantum dot integrated with a nanostructured optical cavity with sub-wavelength confinement of light. The design is based on an optical bowtie cavity [2] in an InP dielectric membrane with an embedded InGaAsP quantum well. By modifying the central bowtie geometry, the structure can be made to support localized electron-hole states in the region of the optical hotspot. The concept is illustrated in Fig. 1.
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