45纳米及以上的挑战

ICCAD. IEEE/ACM International Conference on Computer-Aided Design Pub Date : 2008-11-10 DOI:10.1109/ICCAD.2008.4681538

Dan Bailey, E. Soenen, Puneet Gupta, P. Villarrubia, S. Dhong

{"title":"45纳米及以上的挑战","authors":"Dan Bailey, E. Soenen, Puneet Gupta, P. Villarrubia, S. Dhong","doi":"10.1109/ICCAD.2008.4681538","DOIUrl":null,"url":null,"abstract":"Design at 45nm technologies and below is a risky proposition because of the many design challenges involved: variability, leakage, verification complexity, poor analog device performance, etc. In this panel, experienced designers coming from different backgrounds talk about how they have overcome some of the design and CAD challenges in 45nm, what CAD challenges still exist and how the CAD community can help.","PeriodicalId":90518,"journal":{"name":"ICCAD. IEEE/ACM International Conference on Computer-Aided Design","volume":"48 1","pages":"7"},"PeriodicalIF":0.0000,"publicationDate":"2008-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Challenges at 45nm and beyond\",\"authors\":\"Dan Bailey, E. Soenen, Puneet Gupta, P. Villarrubia, S. Dhong\",\"doi\":\"10.1109/ICCAD.2008.4681538\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Design at 45nm technologies and below is a risky proposition because of the many design challenges involved: variability, leakage, verification complexity, poor analog device performance, etc. In this panel, experienced designers coming from different backgrounds talk about how they have overcome some of the design and CAD challenges in 45nm, what CAD challenges still exist and how the CAD community can help.\",\"PeriodicalId\":90518,\"journal\":{\"name\":\"ICCAD. IEEE/ACM International Conference on Computer-Aided Design\",\"volume\":\"48 1\",\"pages\":\"7\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-11-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ICCAD. IEEE/ACM International Conference on Computer-Aided Design\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICCAD.2008.4681538\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ICCAD. IEEE/ACM International Conference on Computer-Aided Design","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCAD.2008.4681538","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

45纳米及以下技术的设计是一个有风险的命题，因为涉及许多设计挑战:可变性、泄漏、验证复杂性、模拟器件性能差等。在这个小组中，来自不同背景的经验丰富的设计师谈论了他们如何克服45纳米的设计和CAD挑战，CAD挑战仍然存在，以及CAD社区如何提供帮助。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Challenges at 45nm and beyond

Design at 45nm technologies and below is a risky proposition because of the many design challenges involved: variability, leakage, verification complexity, poor analog device performance, etc. In this panel, experienced designers coming from different backgrounds talk about how they have overcome some of the design and CAD challenges in 45nm, what CAD challenges still exist and how the CAD community can help.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

ICCAD. IEEE/ACM International Conference on Computer-Aided Design

自引率

0.00%

发文量

期刊最新文献

Intelligent Real-time Human Activity Recognition Using Wi-Fi Signals A New H∞ Filter for a Nonlinear Singular System in the Time Domain Stability Analysis of an Anaerobic Wastewater Treatment Model Optimal sliding mode control for a pendulum system A new time domain functional observer design for bilinear system with constant time delay and unknown input