深低温下FDSOI mosfet的电热特性数值模拟

G. Ghibaudo, F. Balestra
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引用次数: 2

摘要

本文首次提出了块体硅中电子和声子的热功率S、导热系数K和热容C的原始公式。这些系数作为费米能级,温度和/或载流子浓度的函数的封闭形式解析近似被开发用于TCAD模拟的实现。这些S, K和C的解析表达式被用来模拟FDSOI(绝缘体上全耗尽硅)MOSFET在室温到极低温度下对前门电压的电热特性。所得结果允许区分电子和声子对整个性质的贡献。这些分析对于FDSOI mosfet在极低温度下进行TCAD模拟以全面评估电热性能非常有用。
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Numerical Simulation of Electro-Thermal Properties in FDSOI MOSFETs Down to Deep Cryogenic Temperatures
An original reformulation of the thermopower S, heat conductivity K and heat capacitance C in bulk silicon for electrons and phonons is first proposed. Closed-form analytical approximations for these coefficients as a function of Fermi level, temperature and/or carrier concentration are developed for implementation in TCAD simulation. These analytical expressions for S, K and C have been employed to simulate the electro-thermal properties of a FDSOI (Fully depleted silicon on insulator) MOSFET versus front gate voltage from room down to very low temperature. The obtained results allow discriminating the electron and phonon contributions to the whole properties. These analyses could be very useful to further performing TCAD simulations of FDSOI MOSFETs down to very low temperature for full assessment of electro-thermal performances.
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来源期刊
Journal of Electrical and Electronics Engineering
Journal of Electrical and Electronics Engineering Engineering-Electrical and Electronic Engineering
CiteScore
0.90
自引率
0.00%
发文量
0
审稿时长
16 weeks
期刊介绍: Journal of Electrical and Electronics Engineering is a scientific interdisciplinary, application-oriented publication that offer to the researchers and to the PhD students the possibility to disseminate their novel and original scientific and research contributions in the field of electrical and electronics engineering. The articles are reviewed by professionals and the selection of the papers is based only on the quality of their content and following the next criteria: the papers presents the research results of the authors, the papers / the content of the papers have not been submitted or published elsewhere, the paper must be written in English, as well as the fact that the papers should include in the reference list papers already published in recent years in the Journal of Electrical and Electronics Engineering that present similar research results. The topics and instructions for authors of this journal can be found to the appropiate sections.
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