采用新型氟化和非氟化前驱体制备高质量YBa2Cu3O7−δ薄膜

Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI:10.1051/jphyscol:1995547

B. C. Richads, S. Cook, D. L. Pinch, G. W. Andrews

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引用次数: 0

摘要

利用新型氟化和非氟化前驱体[Ba(TDFND) 2 .四烯酰胺]、[Cu(TDFND) 2]和[Y(TMHD) 3 .4- t BuPyNO] 2以及传统的β-二酮酸配合物[Y(TMHD) 3] 3和[Cu(TMHD) 2]，通过MOCVD法制备了第一个高质量的YBa 2 Cu 3 7-5薄膜。这种新型前体具有热稳定性和高挥发性。它们的熔点低，为90k，临界电流密度在77K时为jc > 10 6 Acm -2。氟含量~ 100 ppm已通过SIMS测定。

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MOCVD of high quality YBa2Cu3O7−δ thin films using novel fluorinated and non-fluorinated precursors

The first high quality, YBa 2 Cu 3 O 7-5 thin films have been produced by MOCVD using the novel fluorinated and non-fluorinated precursors, [Ba(TDFND) 2 .tetraglyme], [Cu(TDFND) 2 ] and [Y(TMHD) 3 .4- t BuPyNO] 2 and the traditional β-diketonate complexes [Y(TMHD) 3 ] 3 and [Cu(TMHD) 2 ]. The novel precursors are thermally stable and highly volatile. Their low melting points, 90 K and critical current density, J c > 10 6 Acm -2 at 77K. Fluorine content ∼100 ppm has been determined by SIMS.

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Le Journal De Physique Colloques

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