{"title":"无序量子阱激子局域化与发光光谱的关系","authors":"U. Jahn, H. Grahn","doi":"10.1002/1521-3951(200211)234:1<443::AID-PSSB443>3.0.CO;2-R","DOIUrl":null,"url":null,"abstract":"We report on basic physical aspects of exciton localization in quantum wells (QWs) grown by molecular-beam epitaxy under very different conditions. For GaAs/(Al, Ga)As QWs, the relation between photoluminescence (PL), PL excitation, and μ-PL spectra, as well as the effective mobility edge of excitons in QWs are discussed. Exciton localization in (In, Ga)N/GaN and GaN/(Al, Ga)N multiple QWs is investigated to determine its influence on the quantum efficiency, which is an important issue for the application of this material system in short-wavelength light emitters.","PeriodicalId":20406,"journal":{"name":"Physica Status Solidi B-basic Solid State Physics","volume":"103 1","pages":"443-452"},"PeriodicalIF":1.5000,"publicationDate":"2002-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"The relation between exciton localization and luminescence spectra for disordered quantum wells\",\"authors\":\"U. Jahn, H. Grahn\",\"doi\":\"10.1002/1521-3951(200211)234:1<443::AID-PSSB443>3.0.CO;2-R\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report on basic physical aspects of exciton localization in quantum wells (QWs) grown by molecular-beam epitaxy under very different conditions. For GaAs/(Al, Ga)As QWs, the relation between photoluminescence (PL), PL excitation, and μ-PL spectra, as well as the effective mobility edge of excitons in QWs are discussed. Exciton localization in (In, Ga)N/GaN and GaN/(Al, Ga)N multiple QWs is investigated to determine its influence on the quantum efficiency, which is an important issue for the application of this material system in short-wavelength light emitters.\",\"PeriodicalId\":20406,\"journal\":{\"name\":\"Physica Status Solidi B-basic Solid State Physics\",\"volume\":\"103 1\",\"pages\":\"443-452\"},\"PeriodicalIF\":1.5000,\"publicationDate\":\"2002-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Physica Status Solidi B-basic Solid State Physics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1002/1521-3951(200211)234:1<443::AID-PSSB443>3.0.CO;2-R\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Physica Status Solidi B-basic Solid State Physics","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1002/1521-3951(200211)234:1<443::AID-PSSB443>3.0.CO;2-R","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
The relation between exciton localization and luminescence spectra for disordered quantum wells
We report on basic physical aspects of exciton localization in quantum wells (QWs) grown by molecular-beam epitaxy under very different conditions. For GaAs/(Al, Ga)As QWs, the relation between photoluminescence (PL), PL excitation, and μ-PL spectra, as well as the effective mobility edge of excitons in QWs are discussed. Exciton localization in (In, Ga)N/GaN and GaN/(Al, Ga)N multiple QWs is investigated to determine its influence on the quantum efficiency, which is an important issue for the application of this material system in short-wavelength light emitters.
期刊介绍：
physica status solidi is devoted to the thorough peer review and the rapid publication of new and important results in all fields of solid state and materials physics, from basic science to applications and devices. Being among the largest and most important international publications, the pss journals publish review articles, letters and original work as well as special issues and conference contributions.
physica status solidi b – basic solid state physics is devoted to topics such as theoretical and experimental investigations of the atomistic and electronic structure of solids in general, phase transitions, electronic and optical properties of low-dimensional, nano-scale, strongly correlated, or disordered systems, superconductivity, magnetism, ferroelectricity etc.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
