二硝基苯在硅电极上的电化学检测:爆炸物传感器

Surfaces Pub Date : 2022-03-04 DOI:10.3390/surfaces5010015
Essam M. Dief, N. Hoffmann, N. Darwish
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引用次数: 1

摘要

爆炸物的探测对于保护和刑事调查至关重要,开发新型爆炸物传感器是分析和法医化学工作的前沿。硝基芳香族化合物由于其末端硝基可被电化学还原,已成为爆炸物电化学传感器的分析目标。通过跟踪NACs在这些电极上的可逆氧化/还原特性,各种电极材料已被用于检测溶液中的NACs,包括玻碳电极(GCE)、铂电极(Pt)和金电极(Au)。在这里,我们证明了二硝基苯(DNB)在无氧化物硅(Si-H)电极上的还原是不可逆的,两个还原峰在连续伏安扫描中消失。AFM成像显示形成了一层聚合物膜,其厚度随DNB浓度的增加而增大。这表明Si-H表面可以作为DNB传感器和其他可能的爆炸性物质。循环伏安法(CV)测量表明,硅-氢的检出限(LoD)比GCE低一个数量级。此外,EIS测量表明,DNB对Si-H的LoD比CV法低两个数量级。Si-H表面可用于跟踪DNB的存在,这一事实使其成为实现传感平台的合适表面。然而,为了将这一概念转化为传感器,它将需要与当前半导体技术兼容的工程和制造前景。
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Electrochemical Detection of Dinitrobenzene on Silicon Electrodes: Toward Explosives Sensors
Detection of explosives is vital for protection and criminal investigations, and developing novel explosives’ sensors stands at the forefront of the analytical and forensic chemistry endeavors. Due to the presence of terminal nitro groups that can be electrochemically reduced, nitroaromatic compounds (NACs) have been an analytical target for explosives’ electrochemical sensors. Various electrode materials have been used to detect NACs in solution, including glassy carbon electrodes (GCE), platinum (Pt), and gold (Au) electrodes, by tracking the reversible oxidation/reduction properties of the NACs on these electrodes. Here, we show that the reduction of dinitrobenzene (DNB) on oxide-free silicon (Si–H) electrodes is irreversible with two reduction peaks that disappear within the successive voltammetric scanning. AFM imaging showed the formation of a polymeric film whose thickness scales up with the DNB concentration. This suggest that Si–H surfaces can serve as DNB sensors and possibly other explosive substances. Cyclic voltammetry (CV) measurements showed that the limit of detection (LoD) on Si–H is one order of magnitude lower than that obtained on GCE. In addition, EIS measurements showed that the LoD of DNB on Si–H is two orders of magnitude lower than the CV method. The fact that a Si–H surface can be used to track the presence of DNB makes it a suitable surface to be implemented as a sensing platform. To translate this concept into a sensor, however, it would require engineering and fabrication prospect to be compatible with the current semiconductor technologies.
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