二维方形晶格和六边形硫族锌在第一性原理计算下的弹性、光学和热电性质

Pankaj Kumar, D. R. Roy
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摘要

本文报道了具有二维方形晶格和六边形相的硫族锌[s‐和h‐ZnX (X = GrVI)]的弹性、光学和热电性质。根据声子色散的研究,s‐ZnX和h‐ZnX结构是动态稳定的。所有的s‐和h‐ZnX化合物都被发现是半导体的,在PBE下的直接和间接带隙范围为0.81 ~ 2.77 eV,在HSE06计算中为1.70 ~ 4.15 eV。研究了s‐和h‐ZnX带结构中电子载流子和空穴载流子的有效质量、迁移率和弛豫时间,以便更好地了解这些材料。除了声子色散分析外,还从弹性特性的角度评估了它们的力学稳定性,得到的弹性参数验证了它们的力学稳定性。研究了s‐和h‐ZnX在平行和垂直方向上发生的场偏振的光学性质。在室温下,s‐ZnTe化合物具有最佳性能值(ZT),表明它是整个系列中最好的热电材料。这些化合物也可用于紫外激光器、太阳能电池、电子图像显示器、高密度光存储器、光电探测器和固态激光器件。
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Elastic, Optical, and Thermoelectric Properties of 2D Square Lattice and Hexagonal Zinc Chalcogenides under First‐Principles Calculations
Herein, elastic, optical, and thermoelectric properties of zinc chalcogenides with 2D square lattice and hexagonal phases [s‐ and h‐ZnX (X = GrVI)] are reported. The s‐ZnX and h‐ZnX structures are achieved to be dynamically stable, according to the phonon dispersion studies. All s‐ and h‐ZnX compounds are found to be semiconductor, with direct and indirect bandgaps ranging from 0.81 to 2.77 eV under PBE and 1.70 to 4.15 eV by HSE06 calculations. The effective mass, mobility, and relaxation time of electron and hole carriers in the band structures of s‐ and h‐ZnX are investigated to gain a better insight of these materials. In addition to the phonon dispersion analysis, their mechanical stability in terms of elastic properties is evaluated, and the resulting elastic parameters validate their mechanical stability. The optical properties of s‐ and h‐ZnX are inspected in the occurrence of field polarizations across parallel and perpendicular directions. At room temperature, s‐ZnTe compound has an optimum figure of merit (ZT) value, indicating it as the superlative thermoelectric material in the entire series. These compounds may also be explored in ultraviolet lasers, solar cells, electronic image displays, high‐density optical memory, photodetectors, and solid‐state laser devices.
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