二氧化硅基体中Si纳米粒子光激发载流子的飞秒弛豫动力学

2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE) Pub Date : 2012-09-01 DOI:10.1109/OMEE.2012.6464891

V. Kadan, V. A. Dan’ko, I. Indutnyi, I. Dmitruk, P. Korenyuk, I. Blonskyi

{"title":"二氧化硅基体中Si纳米粒子光激发载流子的飞秒弛豫动力学","authors":"V. Kadan, V. A. Dan’ko, I. Indutnyi, I. Dmitruk, P. Korenyuk, I. Blonskyi","doi":"10.1109/OMEE.2012.6464891","DOIUrl":null,"url":null,"abstract":"We show that full saturation of the interface-located trap states by the photogenerated carriers under the femtosecond excitation in nano-Si/SiO2 results in the increase of the free carriers' lifetime and the quantum yield of the luminescence. The observed increase of the quantum yield is unexpected, in contrast to the commonly observed decrease under nanosecond excitation.","PeriodicalId":6332,"journal":{"name":"2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Femtosecond relaxation dynamics of photo-excited carriers in Si nanoparticles embedded in SiO2 matrix\",\"authors\":\"V. Kadan, V. A. Dan’ko, I. Indutnyi, I. Dmitruk, P. Korenyuk, I. Blonskyi\",\"doi\":\"10.1109/OMEE.2012.6464891\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We show that full saturation of the interface-located trap states by the photogenerated carriers under the femtosecond excitation in nano-Si/SiO2 results in the increase of the free carriers' lifetime and the quantum yield of the luminescence. The observed increase of the quantum yield is unexpected, in contrast to the commonly observed decrease under nanosecond excitation.\",\"PeriodicalId\":6332,\"journal\":{\"name\":\"2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/OMEE.2012.6464891\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/OMEE.2012.6464891","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

我们发现，在飞秒激发下，纳米si /SiO2中光生载流子的界面位置阱态完全饱和，导致自由载流子的寿命和发光的量子产率增加。与通常在纳秒激发下观察到的量子产率下降相比，观察到的量子产率的增加是出乎意料的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Femtosecond relaxation dynamics of photo-excited carriers in Si nanoparticles embedded in SiO2 matrix

We show that full saturation of the interface-located trap states by the photogenerated carriers under the femtosecond excitation in nano-Si/SiO2 results in the increase of the free carriers' lifetime and the quantum yield of the luminescence. The observed increase of the quantum yield is unexpected, in contrast to the commonly observed decrease under nanosecond excitation.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)

自引率

0.00%

发文量