An MCT circuit model using the lumped-charge modeling technique

This paper presents a physics-based model of MOS controlled thyristors (MCT) using the lumped-charge modeling technique. As a relatively new power semiconductor device, little effort has been made thus far in creating an accurate model used for simulation. The only MCT model available to date is that based on the two bipolar transistor-behavioral subcircuit model. This model works well for static operation, but it has limitations in predicting the dynamic behavior of the device due to the omission of the internal device physics. The use of the lumped-charge modeling technique facilitates the inclusion of internal physical processes and the structural geometry of the device into the model. As a result, this technique provides a more realistic and accurate model than any other presently available. This model is verified through Saber(R) simulation and experimental results.