{"title":"硅中过渡金属杂质电子结构的CBLM方法","authors":"S. Wilke, J. Masek, B. Velicky","doi":"10.1002/PSSB.2221330249","DOIUrl":null,"url":null,"abstract":"La structure electronique de ces elements dans Si est decrite par une methode parametrisee de reseau de Bethe d'amas a liaisons fortes. Cette methode est basee sur la description explicite d'un amas representant un site interstitiel tetraedrique typique du silicium","PeriodicalId":10913,"journal":{"name":"Day 1 Wed, February 23, 2022","volume":"321 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"1986-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A CBLM Approach to the Electronic Structure of Transition Metal Impurities in Silicon\",\"authors\":\"S. Wilke, J. Masek, B. Velicky\",\"doi\":\"10.1002/PSSB.2221330249\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"La structure electronique de ces elements dans Si est decrite par une methode parametrisee de reseau de Bethe d'amas a liaisons fortes. Cette methode est basee sur la description explicite d'un amas representant un site interstitiel tetraedrique typique du silicium\",\"PeriodicalId\":10913,\"journal\":{\"name\":\"Day 1 Wed, February 23, 2022\",\"volume\":\"321 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1986-02-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Day 1 Wed, February 23, 2022\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1002/PSSB.2221330249\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Day 1 Wed, February 23, 2022","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1002/PSSB.2221330249","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A CBLM Approach to the Electronic Structure of Transition Metal Impurities in Silicon
La structure electronique de ces elements dans Si est decrite par une methode parametrisee de reseau de Bethe d'amas a liaisons fortes. Cette methode est basee sur la description explicite d'un amas representant un site interstitiel tetraedrique typique du silicium
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