深度缺陷对CH3NH3PbI3钙钛矿太阳能电池效率变化的影响

N. L. Adihetty, Dinuka R Ratnasinghe, Muthuthanthrige L. C. Attygalle, Som Narayan, P. Jha
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摘要

三维(3D)卤化物钙钛矿CH3NH3PbI3 (3D- mapi)在钙钛矿太阳能电池中表现出优异的性能。然而,由于三维卤化物钙钛矿晶格紊乱导致的深度缺陷限制了卤化物钙钛矿太阳能电池的性能。我们对具有玻璃/ITO(TCO)/PEDOT: PSS(HTM)/i-2D-MAPI/i-3D-MAPI/i-2D-MAPI/PCBM(ETM)/Ag结构的p-i-n太阳能电池模型的3D-MAPI层的最佳深度缺陷密度进行了数值模拟和研究。由于铅基有机钙钛矿太阳能电池的有机成分在某些环境条件下会降解,因此需要保护膜。这种2D-3D-2D钙钛矿太阳能电池已经被建模为稳定的钙钛矿太阳能电池,通过在3D-MAPI的两侧插入薄的2D-MAPI层来减少降解和潮湿问题。利用SCAPS-1D太阳能电池仿真软件,对三维卤化物钙钛矿层的深层缺陷密度进行优化,以获得电池模型的最佳性能。仿真结果表明,3D-MAPI层的深度缺陷密度不应超过1012cm−3。在3D-MAPI层的低深度缺陷密度处,观察到低暗饱和电流密度和低Shockley-Read-Hall (SRH)复合电流密度。
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The Effect of Deep Defects on the Efficiency Variation of CH3NH3PbI3 Perovskite Solar Cells
Three-dimensional (3D) halide perovskites as CH3NH3PbI3 (3D-MAPI) have shown high performance in the perovskite solar cells. However, deep defects due to lattice disorders in the 3D halide perovskite cause to limit the performance of the halide perovskite solar cells. We have numerically simulated and investigated the optimum deep defect density of the 3D-MAPI layer of the p-i-n solar cell model with the structure of Glass/ITO(TCO)/PEDOT: PSS(HTM)/i-2D-MAPI/i-3D-MAPI/i-2D-MAPI/PCBM(ETM)/Ag. Due to the degradation of the organic components under some environmental conditions, the Pb-based organic perovskite solar cells need protective films. This 2D-3D-2D perovskite solar cell has been modeled as a stable perovskite solar cell, by inserting thin 2D-MAPI layers on both sides of the 3D-MAPI to reduce the degradation and moisture issues. Using SCAPS-1D solar cell simulation software, the deep defect density in the 3D halide perovskite layer was optimized to obtain the best performance of the cell model. Our simulation results have indicated that the deep defect density of the 3D-MAPI layer should not exceed 1012cm−3 for high performance. Also, low dark saturation current density and low Shockley-Read-Hall (SRH) recombination current density were observed at the low deep defect density in the 3D-MAPI layer.
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