{"title":"用于半导体制造和纳米制造的极紫外光刻技术","authors":"H. Kinoshita","doi":"10.1142/S0219607707000219","DOIUrl":null,"url":null,"abstract":"EUV lithography is the exposure technology in which even 15 nm node which is the limit of Si device can be achieved. Unlike the conventional optical lithography, this technology serves as a reflection type optical system, and a multilayer coated mirror is used. Development of manufacturing equipment is accelerated to aim at the utilization starting from 2011. The critical issues of development are the EUV light source which has the power over 115 W and resist with high sensitivity and low line edge roughness (LER).","PeriodicalId":80753,"journal":{"name":"Bulletin - Cosmos Club. Cosmos Club (Washington, D.C.)","volume":"29 1","pages":"51-77"},"PeriodicalIF":0.0000,"publicationDate":"2007-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"EUV LITHOGRAPHY FOR SEMICONDUCTOR MANUFACTURING AND NANOFABRICATION\",\"authors\":\"H. Kinoshita\",\"doi\":\"10.1142/S0219607707000219\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"EUV lithography is the exposure technology in which even 15 nm node which is the limit of Si device can be achieved. Unlike the conventional optical lithography, this technology serves as a reflection type optical system, and a multilayer coated mirror is used. Development of manufacturing equipment is accelerated to aim at the utilization starting from 2011. The critical issues of development are the EUV light source which has the power over 115 W and resist with high sensitivity and low line edge roughness (LER).\",\"PeriodicalId\":80753,\"journal\":{\"name\":\"Bulletin - Cosmos Club. Cosmos Club (Washington, D.C.)\",\"volume\":\"29 1\",\"pages\":\"51-77\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Bulletin - Cosmos Club. Cosmos Club (Washington, D.C.)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1142/S0219607707000219\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Bulletin - Cosmos Club. Cosmos Club (Washington, D.C.)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1142/S0219607707000219","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
EUV LITHOGRAPHY FOR SEMICONDUCTOR MANUFACTURING AND NANOFABRICATION
EUV lithography is the exposure technology in which even 15 nm node which is the limit of Si device can be achieved. Unlike the conventional optical lithography, this technology serves as a reflection type optical system, and a multilayer coated mirror is used. Development of manufacturing equipment is accelerated to aim at the utilization starting from 2011. The critical issues of development are the EUV light source which has the power over 115 W and resist with high sensitivity and low line edge roughness (LER).
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