Sr0.8Bi2.2Ta2O9/HfO2铁电/介电复合薄膜在Si衬底上的集成，用于非易失性存储器

IF 1.3 4区物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Ferroelectrics Letters Section Pub Date : 2019-12-03 DOI:10.1080/07315171.2019.1668682

R. K. Jha, P. Singh, M. Goswami, B. R. Singh

{"title":"Sr0.8Bi2.2Ta2O9/HfO2铁电/介电复合薄膜在Si衬底上的集成，用于非易失性存储器","authors":"R. K. Jha, P. Singh, M. Goswami, B. R. Singh","doi":"10.1080/07315171.2019.1668682","DOIUrl":null,"url":null,"abstract":"Abstract Sr0.8Bi2.2Ta2O9 (SBT) ferroelectric and HfO2 dielectric layers were successively deposited onto the p-type (100) Si substrate via RF sputtering. Metal-Ferroelectric-Insulator-Silicon (MFIS) capacitors were fabricated with 200 nm SBT and 10 nm HfO2 film shows the improved memory window of 1.811 V as compared to the 1.27 V in Metal-Ferroelectric-Silicon (MFS) structures. Improvement in leakage current and breakdown voltage was also observed in the MFIS structures as compared to the MFS structures. Degradation of ferroelectric polarization was not pronounced even after applying 8 × 1012 bipolar cycles in MF(200nm)I(10nm)S structures and the device shows significant data retention time of more than 2.5 hours.","PeriodicalId":50451,"journal":{"name":"Ferroelectrics Letters Section","volume":"1 1","pages":"82 - 89"},"PeriodicalIF":1.3000,"publicationDate":"2019-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Integration of Sr0.8Bi2.2Ta2O9/HfO2 ferroelectric/dielectric composite film on Si substrate for nonvolatile memory applications\",\"authors\":\"R. K. Jha, P. Singh, M. Goswami, B. R. Singh\",\"doi\":\"10.1080/07315171.2019.1668682\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Abstract Sr0.8Bi2.2Ta2O9 (SBT) ferroelectric and HfO2 dielectric layers were successively deposited onto the p-type (100) Si substrate via RF sputtering. Metal-Ferroelectric-Insulator-Silicon (MFIS) capacitors were fabricated with 200 nm SBT and 10 nm HfO2 film shows the improved memory window of 1.811 V as compared to the 1.27 V in Metal-Ferroelectric-Silicon (MFS) structures. Improvement in leakage current and breakdown voltage was also observed in the MFIS structures as compared to the MFS structures. Degradation of ferroelectric polarization was not pronounced even after applying 8 × 1012 bipolar cycles in MF(200nm)I(10nm)S structures and the device shows significant data retention time of more than 2.5 hours.\",\"PeriodicalId\":50451,\"journal\":{\"name\":\"Ferroelectrics Letters Section\",\"volume\":\"1 1\",\"pages\":\"82 - 89\"},\"PeriodicalIF\":1.3000,\"publicationDate\":\"2019-12-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Ferroelectrics Letters Section\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1080/07315171.2019.1668682\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Ferroelectrics Letters Section","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1080/07315171.2019.1668682","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}

引用次数: 3

摘要

采用射频溅射的方法在p型(100)Si衬底上制备了Sr0.8Bi2.2Ta2O9 (SBT)铁电层和HfO2介电层。采用200 nm的SBT制备金属-铁电-绝缘体-硅(MFIS)电容器，10 nm的HfO2薄膜显示，与金属-铁电-硅(MFS)结构的1.27 V相比，记忆窗口提高了1.811 V。与MFS结构相比，MFIS结构的泄漏电流和击穿电压也有所改善。即使在MF(200nm)I(10nm)S结构中施加8 × 1012双极循环，铁电极化也没有明显的退化，并且器件的数据保留时间超过2.5小时。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Integration of Sr0.8Bi2.2Ta2O9/HfO2 ferroelectric/dielectric composite film on Si substrate for nonvolatile memory applications

Abstract Sr0.8Bi2.2Ta2O9 (SBT) ferroelectric and HfO2 dielectric layers were successively deposited onto the p-type (100) Si substrate via RF sputtering. Metal-Ferroelectric-Insulator-Silicon (MFIS) capacitors were fabricated with 200 nm SBT and 10 nm HfO2 film shows the improved memory window of 1.811 V as compared to the 1.27 V in Metal-Ferroelectric-Silicon (MFS) structures. Improvement in leakage current and breakdown voltage was also observed in the MFIS structures as compared to the MFS structures. Degradation of ferroelectric polarization was not pronounced even after applying 8 × 1012 bipolar cycles in MF(200nm)I(10nm)S structures and the device shows significant data retention time of more than 2.5 hours.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Ferroelectrics Letters Section 物理-物理：凝聚态物理

CiteScore

1.10

自引率

0.00%

发文量

审稿时长

4.8 months

期刊介绍： Ferroelectrics Letters is a separately published section of the international journal Ferroelectrics. Both sections publish theoretical, experimental and applied papers on ferroelectrics and related materials, including ferroelastics, ferroelectric ferromagnetics, electrooptics, piezoelectrics, pyroelectrics, nonlinear dielectrics, polymers and liquid crystals. Ferroelectrics Letters permits the rapid publication of important, quality, short original papers on the theory, synthesis, properties and applications of ferroelectrics and related materials.