氧化物超导体的原子逐层MOCVD

S. Oda, Shuu'ichirou Yamamoto, A. Kawaguchi
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引用次数: 1

摘要

采用原子逐层金属有机化学气相沉积(MOCVD)技术,在650℃的srtio3衬底上制备了一层无析出物、粗糙度小于10μmx10μm的C轴取向YBa 2 Cu 3 Ox (YBCO)薄膜。梯田的长度很大(0.3 ~ 0.5μm),这可能是由于生长物种在地表的迁移增强所致。讨论了利用NdGaO 3衬底制备具有较大台阶宽度表面的YBCO薄膜的结果。阐明了岩石形成与基底位错之间的关系,并提出了消除岩石的方法。在4.2K和77K下分别获得了3 × 10 7 A/ cm2和3 × 10 6 A/ cm2的超高超导临界电流密度。
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Atomic layer-by-layer MOCVD of oxide superconductors
A very smooth surface film of c-axis oriented YBa 2 Cu 3 Ox (YBCO) with roughness of less than monomolecular layer over 10μmx10μm, free of precipitates, has been obtained by atomic layer-by-layer metalorganic chemical vapor deposition (MOCVD) on a SrTiO 3 substrate at 650°C. A very large terrace length of 0.3-0.5μm may be due to the enhanced migration of growing species on the surface. The result of an attempt to prepare YBCO films with a larger terrace width surface using NdGaO 3 substrates is discussed. The correlation between boulder formation and dislocations in the substrate is clarified and methods for eliminating boulders are proposed. Very high superconductivity critical current densities of 3x10 7 A/cm 2 at 4.2K and 3x10 6 A/cm 2 at 77K have been obtained.
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