{"title":"硅基III-V类化合物的研究进展","authors":"M. Razeghi","doi":"10.1016/0146-3535(89)90010-5","DOIUrl":null,"url":null,"abstract":"<div><p>The performance of photonic and electronic devices fabricated with III–V compounds on silicon substrate has advanced to the degree that this technology may be considered for device applications. In this paper, the recent advances on the growth, characterization, and applications of III–V compounds on Si substrates using low pressure metalorganic chemical vapor deposition growth technique are presented.</p></div>","PeriodicalId":101046,"journal":{"name":"Progress in Crystal Growth and Characterization","volume":"19 1","pages":"Pages 21-37"},"PeriodicalIF":0.0000,"publicationDate":"1989-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0146-3535(89)90010-5","citationCount":"8","resultStr":"{\"title\":\"Recent advances in III–V compounds on silicon\",\"authors\":\"M. Razeghi\",\"doi\":\"10.1016/0146-3535(89)90010-5\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The performance of photonic and electronic devices fabricated with III–V compounds on silicon substrate has advanced to the degree that this technology may be considered for device applications. In this paper, the recent advances on the growth, characterization, and applications of III–V compounds on Si substrates using low pressure metalorganic chemical vapor deposition growth technique are presented.</p></div>\",\"PeriodicalId\":101046,\"journal\":{\"name\":\"Progress in Crystal Growth and Characterization\",\"volume\":\"19 1\",\"pages\":\"Pages 21-37\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1989-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1016/0146-3535(89)90010-5\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Progress in Crystal Growth and Characterization\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/0146353589900105\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Progress in Crystal Growth and Characterization","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/0146353589900105","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The performance of photonic and electronic devices fabricated with III–V compounds on silicon substrate has advanced to the degree that this technology may be considered for device applications. In this paper, the recent advances on the growth, characterization, and applications of III–V compounds on Si substrates using low pressure metalorganic chemical vapor deposition growth technique are presented.
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