基于非对称Mach-Zehnder干涉仪蚀刻LNOI平台的全集成铌酸锂电光调制器

2017 IEEE Photonics Conference (IPC) Part II Pub Date : 2017-10-01 DOI:10.1109/IPCON.2017.8116080

M. Mahmoud, Christian G. Bottenfield, L. Cai, G. Piazza

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引用次数: 6

摘要

在500nm y型铌酸锂薄膜上刻蚀制备了非对称Mach-Zehnder电光调制器。该器件的半波电压长度积为16.8Vcm，调制效率为9.4×10−3V−1，与理论预测值非常接近。

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Fully integrated lithium niobate electro-optic modulator based on asymmetric Mach-Zehnder interferometer etched in LNOI platform

An asymmetric Mach-Zehnder electro-optic modulator is fabricated through etching in 500nm thin film of Y-cut Lithium Niobate. A half wave voltage length product of 16.8Vcm and modulation efficiency of 9.4×10⁻³V⁻¹ were measured for this device which is very close to what we expect from theory.

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2017 IEEE Photonics Conference (IPC) Part II

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