离子液体和离子凝胶顶栅MoS2场效应晶体管的比较

IF 1.2 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY Applied Science and Convergence Technology Pub Date : 2021-09-30 DOI:10.5757/asct.2021.30.5.156

Guen Hyung Oh, Taewan Kim

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引用次数: 0

摘要

聚合物电解质和离子液体在栅极介质方面的应用引起了人们的极大兴趣。在这项研究中，我们使用IL和离子凝胶(IG)栅极介质制备了顶门控二硫化钼(MoS2)薄膜晶体管。室温拉曼光谱测量表明，与双层MoS2薄膜相关的主要光谱发射峰为358 cm−1 (E1 2g)和406.44 cm−1 (A1g)。采用IG栅极介质制备的薄膜场效应晶体管(FET)表现出带输运，迁移率最高为0.5 cm2/V·s, ION/IOFF比较差，为~10。相比之下，具有IL栅极介质的FET在迁移率方面提高了3400% (17.9 cm2/V·s)，离子/IOFF比提高了1000%(~100)。

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Comparison of Ionic Liquid and Ion-Gel Top-Gate MoS2 Field-Effect Transistors

Polymer electrolytes and ionic liquids (ILs) have attracted significant interest in applications as gate dielectrics. In this study, we fabricated top-gated molybdenum disulfide (MoS2) thin-film transistors using IL and ion-gel (IG) gate dielectrics. Room-temperature Raman spectra measurements indicated a dominant peak spectral emission at 358 cm−1 (E1 2g) and 406.44 cm−1 (A1g) associated with bilayer MoS2 films. The fabricated thin-film field-effect transistors (FET) with IG gate dielectric exhibited band transport with a highest mobility of 0.5 cm2/V⋅s, and a poor ION/IOFF ratio of ~10. By contrast, the FET with IL gate dielectric exhibited a 3400 % improvement in terms of the mobility (17.9 cm2/V⋅s), and a 1000 % improvement of the ION/IOFF ratio (~100).

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来源期刊

Applied Science and Convergence Technology PHYSICS, APPLIED-

CiteScore

1.40

自引率

12.50%

发文量