一种不受形貌影响的晶圆级铆钉封装,具有类似乐高的组装

Eunsung Lee, Woon-Bae Kim, I. Song, C. Moon, M. Kang, H. Kim, K. Chun
{"title":"一种不受形貌影响的晶圆级铆钉封装,具有类似乐高的组装","authors":"Eunsung Lee, Woon-Bae Kim, I. Song, C. Moon, M. Kang, H. Kim, K. Chun","doi":"10.1109/SENSOR.2005.1497488","DOIUrl":null,"url":null,"abstract":"The authors have successfully demonstrated an alternative method for high yield packaging process, offering a morphological insensitive and wafer level process. It enables not only the encapsulation to be hermetic but also the vias to be electrically-interconnected simultaneously. The mushroom structure of cap wafer makes the seal-line of solder void-free and the assembly process easier in wafer-alignment, giving room for the mismatched-volume between solder and trench. The mushroom structure is formed by SF/sub 6/-based isotropic Si etch and the solder of Sn is electroplated by thick photoresist lithography. The vias are successfully sealed with solders shaped like a dome at the top corner and electrically interconnected. A gross leak detection of pressurized dye-penetration shows that this scheme is morphologically insensitive compared with the \"face-to-face\" bonding method.","PeriodicalId":22359,"journal":{"name":"The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05.","volume":"21 1","pages":"1977-1980 Vol. 2"},"PeriodicalIF":0.0000,"publicationDate":"2005-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"A morphology-independent wafer level rivet packaging with Lego-like assembly\",\"authors\":\"Eunsung Lee, Woon-Bae Kim, I. Song, C. Moon, M. Kang, H. Kim, K. Chun\",\"doi\":\"10.1109/SENSOR.2005.1497488\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The authors have successfully demonstrated an alternative method for high yield packaging process, offering a morphological insensitive and wafer level process. It enables not only the encapsulation to be hermetic but also the vias to be electrically-interconnected simultaneously. The mushroom structure of cap wafer makes the seal-line of solder void-free and the assembly process easier in wafer-alignment, giving room for the mismatched-volume between solder and trench. The mushroom structure is formed by SF/sub 6/-based isotropic Si etch and the solder of Sn is electroplated by thick photoresist lithography. The vias are successfully sealed with solders shaped like a dome at the top corner and electrically interconnected. A gross leak detection of pressurized dye-penetration shows that this scheme is morphologically insensitive compared with the \\\"face-to-face\\\" bonding method.\",\"PeriodicalId\":22359,\"journal\":{\"name\":\"The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05.\",\"volume\":\"21 1\",\"pages\":\"1977-1980 Vol. 2\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-06-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SENSOR.2005.1497488\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SENSOR.2005.1497488","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

摘要

作者已经成功地展示了一种高产量封装工艺的替代方法,提供了形态不敏感和晶圆级工艺。它不仅可以使封装是密封的,而且还可以使通孔同时电连接。盖晶圆的蘑菇状结构使焊料密封线无空隙,组装过程更容易对圆,为焊料与槽间的错配体积提供了空间。采用SF/sub - 6基各向同性Si蚀刻形成蘑菇状结构,采用厚光刻技术电镀锡焊料。孔成功地与顶部角落形状像一个圆顶的焊料密封,并通过电气连接。高压染料渗透的泄漏检测表明,与“面对面”键合方法相比,该方案在形态上不敏感。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
A morphology-independent wafer level rivet packaging with Lego-like assembly
The authors have successfully demonstrated an alternative method for high yield packaging process, offering a morphological insensitive and wafer level process. It enables not only the encapsulation to be hermetic but also the vias to be electrically-interconnected simultaneously. The mushroom structure of cap wafer makes the seal-line of solder void-free and the assembly process easier in wafer-alignment, giving room for the mismatched-volume between solder and trench. The mushroom structure is formed by SF/sub 6/-based isotropic Si etch and the solder of Sn is electroplated by thick photoresist lithography. The vias are successfully sealed with solders shaped like a dome at the top corner and electrically interconnected. A gross leak detection of pressurized dye-penetration shows that this scheme is morphologically insensitive compared with the "face-to-face" bonding method.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
A new capacitive displacement sensor with high accuracy and long range Novel NDIR CO/sub 2/ sensor for indoor air quality monitoring A thin film strip for aerodynamic body pressure profile monitoring High power electrostatic motor with micropatterned electret on shrouded turbine Implantable blood pressure monitoring of small animal for advanced biological research
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1