LaFeO3陶瓷的巨介电响应和复阻抗分析

IF 2.1 3区 物理与天体物理 Q3 PHYSICS, APPLIED Journal of Advanced Dielectrics Pub Date : 2022-10-01 DOI:10.1142/s2010135x22500199
S. Sahoo, K. Andryushin, P. K. Mahapatra, R. Choudhary
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引用次数: 0

摘要

目前的研究主要集中在LaFeO3陶瓷的巨介电响应和复阻抗分析上。采用柠檬酸凝胶法制备了所研究的样品。通过XRD图和SEM显微图分析了材料的结构和微观结构。根据麦克斯韦-瓦格纳机制引起的极化和氧空位介导的Fe[公式:见文]-V[公式:见文]-Fe[公式:见文]交换相互作用,分析了介电常数随温度曲线的异常。在室温下,在100 Hz下,样品中也观察到巨大的介电常数[公式:见文]105。LaFeO3的巨大介电常数主要是由内部阻挡层电容器(IBLC)的形成驱动的。从晶界的电阻和电容以及晶界的阻抗分析都证实了IBLC的形成是基于高绝缘晶界和低电阻/半导体晶界。从宽的不对称弛豫峰出发,研究了与晶粒和晶界效应相关的非debye型弛豫过程。计算了晶粒和晶界效应的弛豫时间。除此之外,我们还分析了阻抗虚部和电模量的归一化波德图,表明了载流子的短程运动主导了弛豫过程。
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Colossal dielectric response and complex impedance analysis of LaFeO3 ceramics
The present investigations mainly focused on the colossal dielectric response and complex impedance analysis of LaFeO3 ceramics. The studied sample was prepared by a citrate gel method. Structural and microstructural properties are analyzed from the XRD pattern and SEM micrograph. The anomalies in the dielectric constant versus temperature plots are analyzed on the basis of polarization induced by the Maxwell-Wagner mechanisms and ferromagnetic interaction between the Fe[Formula: see text] ions driven by the oxygen vacancy mediated Fe[Formula: see text]–V[Formula: see text] –Fe[Formula: see text] exchange interaction A giant dielectric permittivity in the order of [Formula: see text]105 was observed in the sample even at the room temperature for 100 Hz. The colossal dielectric constant in LaFeO3 is mainly driven by the internal barrier layer capacitor (IBLC) formation. The formation of IBLC was explained on the basis of highly insulating grain boundary and less resistive/semiconducting grain, which was confirmed from both the resistance and capacitance of grain and grain boundary from the impedance analysis. The non-Debye-type relaxation process associated with the grain and grain boundary effect was investigated from the broad and asymmetric relaxation peak. The relaxation time for both the grain and grain boundary effect was also calculated. In addition to this, we have also analyzed the normalized bode plot of imaginary part of impedance and electrical modulus which suggests the relaxation process dominated by the short-range movement of charge carriers.
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来源期刊
CiteScore
3.80
自引率
6.50%
发文量
36
审稿时长
18 weeks
期刊介绍: The Journal of Advanced Dielectrics is an international peer-reviewed journal for original contributions on the understanding and applications of dielectrics in modern electronic devices and systems. The journal seeks to provide an interdisciplinary forum for the rapid communication of novel research of high quality in, but not limited to, the following topics: Fundamentals of dielectrics (ab initio or first-principles calculations, density functional theory, phenomenological approaches). Polarization and related phenomena (spontaneous polarization, domain structure, polarization reversal). Dielectric relaxation (universal relaxation law, relaxor ferroelectrics, giant permittivity, flexoelectric effect). Ferroelectric materials and devices (single crystals and ceramics). Thin/thick films and devices (ferroelectric memory devices, capacitors). Piezoelectric materials and applications (lead-based piezo-ceramics and crystals, lead-free piezoelectrics). Pyroelectric materials and devices Multiferroics (single phase multiferroics, composite ferromagnetic ferroelectric materials). Electrooptic and photonic materials. Energy harvesting and storage materials (polymer, composite, super-capacitor). Phase transitions and structural characterizations. Microwave and milimeterwave dielectrics. Nanostructure, size effects and characterizations. Engineering dielectrics for high voltage applications (insulation, electrical breakdown). Modeling (microstructure evolution and microstructure-property relationships, multiscale modeling of dielectrics).
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