铁磁金属/ r面取向Cr2O3多层膜的磁性及晶体结构分析

Takashi Sumida, Kosuke Hashimoto, S. Fukui, T. Hirato, T. Nagata, H. Yamamoto, N. Iwata
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引用次数: 1

摘要

报道了用直流-射频磁控溅射法制备的[Pt/Co]3/Pt/r取向Cr2O3多层膜的晶体结构和磁性能。从2θ-θ x射线衍射剖面的结果来看,生长出高度r面(11 _ 02)取向的Cr2O3薄膜。Pt和Co薄膜的最佳取向是(111)。r面Cr2O3的晶格间距为0.363 nm。该值与体的值一致,表明薄膜生长时没有基底的应力。从倒易空间映射中可以看到(22 _ 010)平面上的衬底峰和薄膜峰,而(22 _ 08)平面上没有峰。通过磁场(H)与磁化强度(M)的关系研究了多层膜的磁性。交换偏置场HEB在5K时为-150Oe,这是在高有序平面Cr2O3薄膜上首次观察到的。
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Magnetic Properties and Crystal Structure Analysis of Ferromagnetic Metal / r-plane Oriented Cr2O3 Multilayer
We report the crystal structures and magnetic properties of [Pt/Co]3/Pt/r-oriented Cr2O3 multilayers fabricated by DC-RF magnetron sputtering method. From the results of 2θ-θ x-ray diffraction profile, highly r-plane (11 _ 02) oriented Cr2O3 film grows. Preferable orientation of Pt and Co films is (111). The lattice spacing of r-plane Cr2O3 was 0.363 nm. This value is in agreement with that of the bulk, indicating that the film is grown without stress from the substrate. From the reciprocal space mapping, both the substrate and film peaks were visible for (22 _ 010) plane, while no peaks were observed for the (22 _ 08) plane. The magnetic property of the multilayer is investigated by magnetic field (H) dependences of the magnetizations (M). The exchange bias filed, HEB, was -150Oe at 5K, which is the first observation using highly ordered rplane Cr2O3 film.
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