一种高效、可扩展的基于edram的GPGPU寄存器文件架构

Naifeng Jing, Yao Shen, Yao Lu, Shrikanth Ganapathy, Zhigang Mao, M. Guo, R. Canal, Xiaoyao Liang
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引用次数: 71

摘要

GPGPU中流多处理器(SM)的高线程数据处理需求需要一个大的寄存器文件(RF)。RF尺寸的快速增长使得未来技术中传统SRAM设计的面积成本和功耗难以承受。在本文中,我们建议使用嵌入式dram (eDRAM)作为未来gpgpu的替代方案。与SRAM相比,eDRAM具有更高的密度和更低的泄漏功率。然而,eDRAM有限的数据保留时间提出了新的挑战。为了保证数据的完整性,需要定期进行刷新操作。这种情况随着eDRAM密度、工艺变化和温度的变化而加剧。与使用多端口RF的传统cpu不同,现代GPGPU中的大多数RF都是大量存储的,但不是多端口的,以降低硬件成本。这提供了一个独特的机会来隐藏刷新开销。我们提出了两种不同的基于3T1D和1T1C存储单元的eDRAM实现。为了减轻周期性刷新的影响,我们提出了两种新颖的刷新解决方案:银行气泡和银行演练。此外,对于1T1C射频,我们设计了一个交错的银行组织以及智能翘曲调度策略,以减少破坏性读取的影响。分析表明,我们的方案比传统的基于sram的设计具有更好的能效、可扩展性和变化容忍度。
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An energy-efficient and scalable eDRAM-based register file architecture for GPGPU
The heavily-threaded data processing demands of streaming multiprocessors (SM) in a GPGPU require a large register file (RF). The fast increasing size of the RF makes the area cost and power consumption unaffordable for traditional SRAM designs in the future technologies. In this paper, we propose to use embedded-DRAM (eDRAM) as an alternative in future GPGPUs. Compared with SRAM, eDRAM provides higher density and lower leakage power. However, the limited data retention time in eDRAM poses new challenges. Periodic refresh operations are needed to maintain data integrity. This is exacerbated with the scaling of eDRAM density, process variations and temperature. Unlike conventional CPUs which make use of multi-ported RF, most of the RFs in modern GPGPU are heavily banked but not multi-ported to reduce the hardware cost. This provides a unique opportunity to hide the refresh overhead. We propose two different eDRAM implementations based on 3T1D and 1T1C memory cells. To mitigate the impact of periodic refresh, we propose two novel refresh solutions using bank bubble and bank walk-through. Plus, for the 1T1C RF, we design an interleaved bank organization together with an intelligent warp scheduling strategy to reduce the impact of the destructive reads. The analysis shows that our schemes present better energy efficiency, scalability and variation tolerance than traditional SRAM-based designs.
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