耗散引起的对称性破缺:含铅和含锡的硫族化合物和卤化物钙钛矿中的强跃迁

K. Mukhuti, S. Sinha, S. Sinha, B. Bansal
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引用次数: 3

摘要

铅和锡基硫系半导体,如PbTe或SnSe,长期以来一直被认为具有异常低的导热性,这使它们成为非常有吸引力的热电材料。一个显然不相关的事实是,这些材料中的激子带隙随着温度的升高而增加,而对于大多数半导体,人们观察到相反的趋势。这两种异常特征也出现在另一类光伏材料中,即卤化物钙钛矿,如CsPbBr3。以前有人提出,局部对称性破坏现象——强调是这些不寻常特征的一个共同起源。十年前发现的,强调的是在高温下观察到的铅或锡离子从立方对称基态到局部扭曲相的位移。这种现象一直令人困惑,因为高温态的对称性低于简并基态是不寻常的。受著名的氨分子振动反转共振的启发,我们提出了一个基于量子隧道的模型来强调退相干是导致局部对称性随着温度升高而破缺的原因。从隧道分裂的温度依赖性解析表达式(作为序参量)出发,我们提供了三参数拟合公式,该公式捕捉了所有相关材料中离子位移的温度依赖性以及激子带隙的异常增加。
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Dissipation-induced symmetry breaking: Emphanitic transitions in lead- and tin-containing chalcogenides and halide perovskites
Lead and tin-based chalcogenide semiconductors like PbTe or SnSe have long been known to exhibit an unusually low thermal conductivity that makes them very attractive thermoelectric materials. An apparently unrelated fact is that the excitonic bandgap in these materials increases with temperature, whereas for most semiconductors one observes the opposite trend. These two anomalous features are also seen in a very different class of photovoltaic materials, namely the halide-perovskites such as CsPbBr3. It has been previously proposed that emphanisis, a local symmetry-breaking phenomenon, is the one common origin of these unusual features. Discovered a decade ago, emphanisis is the name given to the observed displacement of the lead or the tin ions from their cubic symmetry ground state to a locally distorted phase at high temperature. This phenomenon has been puzzling because it is unusual for the high-temperature state to be of a lower symmetry than the degenerate ground state. Motivated by the celebrated vibration-inversion resonance of the ammonia molecule, we propose a quantum tunneling-based model for emphanisis where decoherence is responsible for the local symmetry breaking with increasing temperature. From the analytic expression of the temperature dependence of the tunnel splitting (which serves as an order parameter), we provide three-parameter fitting formulae which capture the observed temperature dependence of the ionic displacements as well as the anomalous increase of the excitonic bandgap in all the relevant materials.
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