基于t - dt - ff的混合脉冲锁存器预测功率控制电路模型

S. Inguva, B. Devi, Anitha Bujunuru, R. Shashikala, O. Ravinder
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引用次数: 0

摘要

脉冲锁存电路是降低存储器中每次读写操作功率的一个重要方面。随着半导体栅极设计复杂度的增加和纳米尺寸的减小,对封装在半导体栅极中的铸造工艺的功耗和其他性能因素进行了设计分析。随着晶体管尺寸的减小和应用类型的选择,低功耗特性在存储器中的重要性不言而喻。在本文中,我们将t - dt - ff建模与使用晶体管栅极的PPC电路设计的混合特征与功耗降低模型相结合。在功率和晶体管尺寸方面,所提出的算法充分提供了W/L比的值,以暗示用于存储器写入和读取条件的脉冲锁存器的不同条件。采用动态CMOS锁存器与PPC电路进行了仿真,对比了32、45和65纳米制程的不同工艺
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Predictive Power Control Circuit Model With T-DET-FF for Hybrid Pulsed Latch Implementation
Pulsed Latches circuits are one important aspects of the reduction of power for each read and write operations in memories. As the design complexity with reduction of nanometers increases the design analysis on power and other performance factors with relate to foundry techniques encapsulated in Semiconductor gates. With importance of low power feature in memories are implied with reduction of size of the transistor and its implementation with type of application chosen. In this paper, we implicate on the feature of power reduction models with a hybrid feature of T-DET-FF modelling with PPC circuit design using transistor gates. With regards of the power and the transistor size the proposed algorithm sufficiently provides the values W/L ratio to implicate the different conditions for Pulsed latches for memory write and read conditions. The simulated results with D-T-FF are implicated with Dynamic CMOS latch with PPC circuit as the comparison of different foundries with 32nm, 45nm and 65nm
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来源期刊
CiteScore
1.00
自引率
0.00%
发文量
66
审稿时长
24 weeks
期刊介绍: The Journal of Engineering Science and Technology Review (JESTR) is a peer reviewed international journal publishing high quality articles dediicated to all aspects of engineering. The Journal considers only manuscripts that have not been published (or submitted simultaneously), at any language, elsewhere. Contributions are in English. The Journal is published by the Eastern Macedonia and Thrace Institute of Technology (EMaTTech), located in Kavala, Greece. All articles published in JESTR are licensed under a CC BY-NC license. Copyright is by the publisher and the authors.
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