用俄歇电子能谱研究了Ni双晶中晶界偏析的温度依赖性

T. Muschik, W. Gust, S. Hofmann, B. Predel
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引用次数: 18

摘要

利用俄杰电子能谱研究了含0.l . 1.4 at的Niin双晶和多晶中铟晶界在对称的«110倾斜边界和随机取向边界上的偏析。%。在1000 ~ 1100 K以上的淬火温度下,由In空位配合物向界面的流动引起的In的非平衡偏析影响了结果。对溅射剖面的仔细分析为讨论当前的QINS模型提供了额外的信息。根据对称边界的平衡偏析行为,首次确定了偏析焓(ΔHse = 38±3 kJ/mol和ΔHseg = 39±3 kJ/mol)和平均偏析熵[ΔSseg =(0±0.5)R]。在970 K时,多晶的偏析自由能为ΔGseg = 50±5 kJ/mol。沿倾斜边界的对称原子排列被认为是低偏析熵的原因。
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The temperature dependence of grain boundary segregation in NiIn bicrystals studied with auger electron spectroscopy

Auger electron spectroscopy has been used to study indium grain boundary segregation in symmetric «110å tilt boundaries and randomly oriented boundaries in bicrystals as well as polycrystals of NiIn containing 0.l–1.4 at. % In. Quench-induced non-equilibrium segregation of In, caused by fluxes of In vacancy complexes to the interfaces, influenced the results for quenching temperatures above 1000–1100 K. A careful analysis of sputtering profiles supplied additional informations for the discussion with respect to current models of QINS. From the equilibrium segregation behaviour for the symmetric boundaries both the segregation enthalpies (ΔHse = 38 ± 3 kJ/mol and ΔHseg = 39 ± 3 kJ/mol) and the mean segregation entropy [ΔSseg = (0 ± 0.5)R] have been determined for the first time. The segregation free energy for 970 K is ΔGseg = 50 ± 5 kJ/mol for the polycrystals. The symmetric atomic arrangement along the tilt boundaries is assumed to be responsible for the low segregation entropy.

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