致编辑:0.14 - 160 nm (9 keV - 8 eV)范围内未涂层CEM的量子效率测量

A. Boscolo, L. Placentino, L. Poletto
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引用次数: 3

摘要

在包括EUV和软x射线区域在内的宽光谱范围内,对工作在光子计数区域的无涂层通道电子倍增器(CEM)的量子效率进行了评估。使用了三种不同的实验装置:约翰逊-奥纳卡单色仪用于30 - 160 nm区域,掠入射单色仪用于0.3 - 30 nm区域,测试设备安装过滤器用于0.14 - 0.3 nm区域。作为二级标准,硅和铝光电二极管都被使用。计算了法向入射角下的效率。在0.14 - 100 nm范围内,测量值从2%到15%不等,而在120 nm范围内,测量值迅速下降。讨论了真空系统中碳污染对效率的影响,以及CEM入口锥上照射面积变化对效率的影响。
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LETTER TO THE EDITOR: Quantum efficiency measurements of an uncoated CEM in the range 0.14 - 160 nm (9 keV - 8 eV)
The quantum efficiency of an uncoated channel electron multiplier (CEM) working in the photon-counting regime has been evaluated over a wide spectral range, which comprises the EUV and soft x-ray regions. Three different experimental set-ups have been used: a Johnson - Onaka monochromator for the 30 - 160 nm region, a grazing incidence monochromator for the 0.3 - 30 nm region and a test facility mounting filters for the 0.14 - 0.3 nm region. As a secondary standard, both silicon and aluminium photodiodes have been used. The efficiency has been evaluated at normal incidence angle. The measured values range from 2% to 15% in the range 0.14 - 100 nm, while a rapid decrease is present over 120 nm. Changes in the efficiency due to carbon contamination in the vacuum system are discussed, and also effects due to variations of the illuminated area on the CEM entrance cone.
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