{"title":"BC2N的高压相稳定性、弹性各向异性及电子性能","authors":"A. Habanyama, G. Samukonga, N. K. Mumba","doi":"10.5897/ijps2020.4929","DOIUrl":null,"url":null,"abstract":"Crystal lattice structure searching by Particle Swarm Optimization (PSO) and first-principles structural optimization have been used to explore polymorphs of BC2N, possessing sp3 hybridization, under a varying applied hydrostatic pressure. Two low Gibbs free energy structures were identified: one with a primitive orthorhombic structure and Space Group, Pmm2, and the other with a primitive tetragonal structure and Space Group, P m2. Dynamical and mechanical stabilities of the Pmm2, orthorhombic BC2N (o-BC2N) structure were established using its phonon dispersions and elastic constants. The bulk modulus of this predicted BC2N phase was 377.15 GPa, which indicates a super-hard compound. The material is brittle with a B/G ratio of 0.911 and a low degree of elastic anisotropy with a Universal Elastic Anisotropy Index of only 0.774%. Calculations of the electronic band structure demonstrated that the material is a direct band gap semiconductor with a band gap of 1.731 eV at zero applied pressure. The band gap increases monotonically with increased applied pressure and saturates to a value of about 1.756 eV above 1500 kbars; the hydrostatic pressure coefficients associated with this process were determined.","PeriodicalId":14294,"journal":{"name":"International Journal of Physical Sciences","volume":"35 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2021-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High pressure phase stability, elastic anisotropy and electronic properties of BC2N\",\"authors\":\"A. Habanyama, G. Samukonga, N. K. Mumba\",\"doi\":\"10.5897/ijps2020.4929\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Crystal lattice structure searching by Particle Swarm Optimization (PSO) and first-principles structural optimization have been used to explore polymorphs of BC2N, possessing sp3 hybridization, under a varying applied hydrostatic pressure. Two low Gibbs free energy structures were identified: one with a primitive orthorhombic structure and Space Group, Pmm2, and the other with a primitive tetragonal structure and Space Group, P m2. Dynamical and mechanical stabilities of the Pmm2, orthorhombic BC2N (o-BC2N) structure were established using its phonon dispersions and elastic constants. The bulk modulus of this predicted BC2N phase was 377.15 GPa, which indicates a super-hard compound. The material is brittle with a B/G ratio of 0.911 and a low degree of elastic anisotropy with a Universal Elastic Anisotropy Index of only 0.774%. Calculations of the electronic band structure demonstrated that the material is a direct band gap semiconductor with a band gap of 1.731 eV at zero applied pressure. The band gap increases monotonically with increased applied pressure and saturates to a value of about 1.756 eV above 1500 kbars; the hydrostatic pressure coefficients associated with this process were determined.\",\"PeriodicalId\":14294,\"journal\":{\"name\":\"International Journal of Physical Sciences\",\"volume\":\"35 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-11-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Journal of Physical Sciences\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.5897/ijps2020.4929\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Journal of Physical Sciences","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.5897/ijps2020.4929","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High pressure phase stability, elastic anisotropy and electronic properties of BC2N
Crystal lattice structure searching by Particle Swarm Optimization (PSO) and first-principles structural optimization have been used to explore polymorphs of BC2N, possessing sp3 hybridization, under a varying applied hydrostatic pressure. Two low Gibbs free energy structures were identified: one with a primitive orthorhombic structure and Space Group, Pmm2, and the other with a primitive tetragonal structure and Space Group, P m2. Dynamical and mechanical stabilities of the Pmm2, orthorhombic BC2N (o-BC2N) structure were established using its phonon dispersions and elastic constants. The bulk modulus of this predicted BC2N phase was 377.15 GPa, which indicates a super-hard compound. The material is brittle with a B/G ratio of 0.911 and a low degree of elastic anisotropy with a Universal Elastic Anisotropy Index of only 0.774%. Calculations of the electronic band structure demonstrated that the material is a direct band gap semiconductor with a band gap of 1.731 eV at zero applied pressure. The band gap increases monotonically with increased applied pressure and saturates to a value of about 1.756 eV above 1500 kbars; the hydrostatic pressure coefficients associated with this process were determined.