G. Lammel, S. Armbruster, C. Schelling, H. Benzel, J. Brasas, M. Illing, R. Gampp, V. Senz, F. Schafer, S. Finkbeiner
{"title":"表面微加工技术中的下一代压力传感器","authors":"G. Lammel, S. Armbruster, C. Schelling, H. Benzel, J. Brasas, M. Illing, R. Gampp, V. Senz, F. Schafer, S. Finkbeiner","doi":"10.1109/SENSOR.2005.1496352","DOIUrl":null,"url":null,"abstract":"One of the first MEMS products - the pressure sensor - has still room for innovation. We report a completely new pressure sensor generation based on a novel surface micromachining technology. Using porous silicon the membrane fabrication can be monolithically integrated with high synergy in an analog/digital semiconductor process suited for high volume production in an IC-fabrication facility. Only two mask layers and one electrochemical etching step are inserted at the beginning of a standard IC-process to transform the epitaxial silicon layer from the electronic process into a monocrystalline membrane with a vacuum cavity under it.","PeriodicalId":22359,"journal":{"name":"The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05.","volume":"24 1","pages":"35-36 Vol. 1"},"PeriodicalIF":0.0000,"publicationDate":"2005-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"20","resultStr":"{\"title\":\"Next generation pressure sensors in surface micromachining technology\",\"authors\":\"G. Lammel, S. Armbruster, C. Schelling, H. Benzel, J. Brasas, M. Illing, R. Gampp, V. Senz, F. Schafer, S. Finkbeiner\",\"doi\":\"10.1109/SENSOR.2005.1496352\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"One of the first MEMS products - the pressure sensor - has still room for innovation. We report a completely new pressure sensor generation based on a novel surface micromachining technology. Using porous silicon the membrane fabrication can be monolithically integrated with high synergy in an analog/digital semiconductor process suited for high volume production in an IC-fabrication facility. Only two mask layers and one electrochemical etching step are inserted at the beginning of a standard IC-process to transform the epitaxial silicon layer from the electronic process into a monocrystalline membrane with a vacuum cavity under it.\",\"PeriodicalId\":22359,\"journal\":{\"name\":\"The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05.\",\"volume\":\"24 1\",\"pages\":\"35-36 Vol. 1\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-06-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"20\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SENSOR.2005.1496352\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SENSOR.2005.1496352","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Next generation pressure sensors in surface micromachining technology
One of the first MEMS products - the pressure sensor - has still room for innovation. We report a completely new pressure sensor generation based on a novel surface micromachining technology. Using porous silicon the membrane fabrication can be monolithically integrated with high synergy in an analog/digital semiconductor process suited for high volume production in an IC-fabrication facility. Only two mask layers and one electrochemical etching step are inserted at the beginning of a standard IC-process to transform the epitaxial silicon layer from the electronic process into a monocrystalline membrane with a vacuum cavity under it.