采用射频溅射技术制备透明导电多晶Ti和H共掺杂In2O3薄膜

G.H. Wang, C. Shi, L. Zhao, L. Mo, H. Diao, W. Wang
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引用次数: 0

摘要

采用射频磁控溅射技术,在150°C的低衬底温度下,制备了Ti和H共掺杂In2O3透明导电多晶薄膜(ITHO),用于硅基异质结或其他薄膜太阳能电池。研究了H2流速对膜结构、电学和光学性能的影响。我们将进一步改善薄膜的性能,并将其用作异质结太阳能电池的电极。
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Transparent conductive polycrystalline Ti and H co-doped In2O3 films by RF sputtering technique
Ti and H co-doped In2O3 transparent conductive polycrystalline films (ITHO) were grown at a low substrate temperature of 150 °C by radio frequency magnetron sputtering for the applications of silicon-based heterojunction or other thin film solar cell. The effect of H2 flow rate on the structure, electrical and optical properties of the films was investigated. We will further improve film properties and employ it as electrode of heterojunction solar cell in the future.
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