{"title":"碘掺杂聚偏氟乙烯增强摩擦电纳米发电机性能","authors":"Rohit Phogaat, Venkatesh Yepuri","doi":"10.17586/2220-8054-2023-14-1-69-73","DOIUrl":null,"url":null,"abstract":"A BSTRACT Because of the rapid improvement of energy collecting technologies, unique mechanical devices have been created. As a result of the energy problems, however, researchers began to create new procedures and strategies for storing as much energy as feasible. Nanotechnology is unique, and it spurred the invention of Triboelectric Nanogenerators (TENGs), which are employed as a source of energy in wearables by transforming mechanical energy into electrical energy. This article discusses TENG, which is a triboelectric material made from Polyvinylidene fluoride (PVDF) and aluminium (Al). TENG may be made in two ways: with PVDF alone or with iodine doped PVDF, with Al staying the same in the both cases. Despite the fact that the materials are triboelectric, aluminium electrodes are utilised to attach to the materials, which are created on a plastic substrate using a thermal evaporator and taped together. The existence of PVDF was verified by the Fourier transform infrared spectroscopy (FTIR) examinations, which revealed high absorption peaks at 723 cm − 1 and 849 cm − 1 , respectively. The digital storage oscilloscope (DSO) and pico-ammeter (10–12 m) measurements of the TENG device’s output voltage and current yielded results of 25V and 8 pA, respectively. Additionally, this study reveals the power density produced and the distinctiveness of this TENG device, both of which are critical to the efficiency and applicability of TENG in a new generation of electronics.","PeriodicalId":18782,"journal":{"name":"Nanosystems: Physics, Chemistry, Mathematics","volume":"16 1","pages":""},"PeriodicalIF":0.8000,"publicationDate":"2023-02-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Performance enhancement of triboelectric nanogenerator using iodine doped PVDF\",\"authors\":\"Rohit Phogaat, Venkatesh Yepuri\",\"doi\":\"10.17586/2220-8054-2023-14-1-69-73\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A BSTRACT Because of the rapid improvement of energy collecting technologies, unique mechanical devices have been created. As a result of the energy problems, however, researchers began to create new procedures and strategies for storing as much energy as feasible. Nanotechnology is unique, and it spurred the invention of Triboelectric Nanogenerators (TENGs), which are employed as a source of energy in wearables by transforming mechanical energy into electrical energy. This article discusses TENG, which is a triboelectric material made from Polyvinylidene fluoride (PVDF) and aluminium (Al). TENG may be made in two ways: with PVDF alone or with iodine doped PVDF, with Al staying the same in the both cases. Despite the fact that the materials are triboelectric, aluminium electrodes are utilised to attach to the materials, which are created on a plastic substrate using a thermal evaporator and taped together. The existence of PVDF was verified by the Fourier transform infrared spectroscopy (FTIR) examinations, which revealed high absorption peaks at 723 cm − 1 and 849 cm − 1 , respectively. The digital storage oscilloscope (DSO) and pico-ammeter (10–12 m) measurements of the TENG device’s output voltage and current yielded results of 25V and 8 pA, respectively. Additionally, this study reveals the power density produced and the distinctiveness of this TENG device, both of which are critical to the efficiency and applicability of TENG in a new generation of electronics.\",\"PeriodicalId\":18782,\"journal\":{\"name\":\"Nanosystems: Physics, Chemistry, Mathematics\",\"volume\":\"16 1\",\"pages\":\"\"},\"PeriodicalIF\":0.8000,\"publicationDate\":\"2023-02-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Nanosystems: Physics, Chemistry, Mathematics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.17586/2220-8054-2023-14-1-69-73\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"NANOSCIENCE & NANOTECHNOLOGY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nanosystems: Physics, Chemistry, Mathematics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.17586/2220-8054-2023-14-1-69-73","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"NANOSCIENCE & NANOTECHNOLOGY","Score":null,"Total":0}
Performance enhancement of triboelectric nanogenerator using iodine doped PVDF
A BSTRACT Because of the rapid improvement of energy collecting technologies, unique mechanical devices have been created. As a result of the energy problems, however, researchers began to create new procedures and strategies for storing as much energy as feasible. Nanotechnology is unique, and it spurred the invention of Triboelectric Nanogenerators (TENGs), which are employed as a source of energy in wearables by transforming mechanical energy into electrical energy. This article discusses TENG, which is a triboelectric material made from Polyvinylidene fluoride (PVDF) and aluminium (Al). TENG may be made in two ways: with PVDF alone or with iodine doped PVDF, with Al staying the same in the both cases. Despite the fact that the materials are triboelectric, aluminium electrodes are utilised to attach to the materials, which are created on a plastic substrate using a thermal evaporator and taped together. The existence of PVDF was verified by the Fourier transform infrared spectroscopy (FTIR) examinations, which revealed high absorption peaks at 723 cm − 1 and 849 cm − 1 , respectively. The digital storage oscilloscope (DSO) and pico-ammeter (10–12 m) measurements of the TENG device’s output voltage and current yielded results of 25V and 8 pA, respectively. Additionally, this study reveals the power density produced and the distinctiveness of this TENG device, both of which are critical to the efficiency and applicability of TENG in a new generation of electronics.