模拟p调制掺杂在InAs量子点器件中的影响

2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2021-09-13 DOI:10.1109/NUSOD52207.2021.9541500

Benjamin C. Maglio, Lydia Jarvis, M. Tang, Huiyun Liu, P. Smowton

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引用次数: 1

摘要

建立了一套模拟程序来量化p调制掺杂对InAs量子点器件波导核心区的影响。利用一维近似，模拟了反向和正向器件的模拟输出，提供了对吸收和增益特性的洞察。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Modeling the effects of p-modulation doping in InAs quantum dot devices

a modeling routine has been developed to quantify the effects of p-modulation doping in the waveguide core region of InAs quantum dot (QD) devices. Utilizing one dimensional approximations, simulated outputs of reverse and forward devices are simulated providing insight into absorption and gain properties.

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2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)

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