{"title":"微米单晶硅薄膜在高温下力学性能的变化","authors":"S. Nakao, T. Ando, M. Shikida, K. Sato","doi":"10.1109/SENSOR.2005.1497484","DOIUrl":null,"url":null,"abstract":"The effects of temperature on the mechanical properties of micron-sized single-crystal-silicon (SCS) film were investigated using an \"on-chip\" tensile test. Young's modulus slightly decreased as the test temperature increased. The fracture stress decreased to 1.78 GPa at 773 K, the value is about 32 % of that at room temperature. The stress-strain relationship of SCS film at 773 K showed elastic-plastic deformation, and we observed crossed slip lines on the side surface of the fractured specimen. The fracture behavior of micron-sized silicon film changed in a temperature range from 673 K to 773 K.","PeriodicalId":22359,"journal":{"name":"The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05.","volume":"7 1","pages":"1961-1964 Vol. 2"},"PeriodicalIF":0.0000,"publicationDate":"2005-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Changes in mechanical properties of micron-sized single-crystal-silicon film at high temperature\",\"authors\":\"S. Nakao, T. Ando, M. Shikida, K. Sato\",\"doi\":\"10.1109/SENSOR.2005.1497484\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The effects of temperature on the mechanical properties of micron-sized single-crystal-silicon (SCS) film were investigated using an \\\"on-chip\\\" tensile test. Young's modulus slightly decreased as the test temperature increased. The fracture stress decreased to 1.78 GPa at 773 K, the value is about 32 % of that at room temperature. The stress-strain relationship of SCS film at 773 K showed elastic-plastic deformation, and we observed crossed slip lines on the side surface of the fractured specimen. The fracture behavior of micron-sized silicon film changed in a temperature range from 673 K to 773 K.\",\"PeriodicalId\":22359,\"journal\":{\"name\":\"The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05.\",\"volume\":\"7 1\",\"pages\":\"1961-1964 Vol. 2\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-06-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SENSOR.2005.1497484\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SENSOR.2005.1497484","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Changes in mechanical properties of micron-sized single-crystal-silicon film at high temperature
The effects of temperature on the mechanical properties of micron-sized single-crystal-silicon (SCS) film were investigated using an "on-chip" tensile test. Young's modulus slightly decreased as the test temperature increased. The fracture stress decreased to 1.78 GPa at 773 K, the value is about 32 % of that at room temperature. The stress-strain relationship of SCS film at 773 K showed elastic-plastic deformation, and we observed crossed slip lines on the side surface of the fractured specimen. The fracture behavior of micron-sized silicon film changed in a temperature range from 673 K to 773 K.