{"title":"脉冲激光模拟SEE中LET的计算","authors":"Jianguo Huang, Jianwei Han","doi":"10.1360/04YW0108","DOIUrl":null,"url":null,"abstract":"A key point in SEE (Single Event Effect) simulation experiment is how to calculate the equivalent LET (Linear Energy Transfer) for laser pulse. In this paper, the calculation method considering the influences of nonlinear absorption in semiconductor, reflection and refraction on device surface and other factors is presented. Simultaneously an instance of calculation is provided, with the result in good agreement with the SEU (Single Event Upset) threshold measured by heavy ions.","PeriodicalId":21584,"journal":{"name":"Science in China Series G: Physics and Astronomy","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2005-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Calculation of LET in SEE simulation by pulsed laser\",\"authors\":\"Jianguo Huang, Jianwei Han\",\"doi\":\"10.1360/04YW0108\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A key point in SEE (Single Event Effect) simulation experiment is how to calculate the equivalent LET (Linear Energy Transfer) for laser pulse. In this paper, the calculation method considering the influences of nonlinear absorption in semiconductor, reflection and refraction on device surface and other factors is presented. Simultaneously an instance of calculation is provided, with the result in good agreement with the SEU (Single Event Upset) threshold measured by heavy ions.\",\"PeriodicalId\":21584,\"journal\":{\"name\":\"Science in China Series G: Physics and Astronomy\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-02-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Science in China Series G: Physics and Astronomy\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1360/04YW0108\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Science in China Series G: Physics and Astronomy","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1360/04YW0108","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Calculation of LET in SEE simulation by pulsed laser
A key point in SEE (Single Event Effect) simulation experiment is how to calculate the equivalent LET (Linear Energy Transfer) for laser pulse. In this paper, the calculation method considering the influences of nonlinear absorption in semiconductor, reflection and refraction on device surface and other factors is presented. Simultaneously an instance of calculation is provided, with the result in good agreement with the SEU (Single Event Upset) threshold measured by heavy ions.
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