用于可见光和塑料光纤通信的高速iii -氮化物基发光二极管的研制

2017 IEEE Photonics Conference (IPC) Part II Pub Date : 2017-11-20 DOI:10.1109/IPCON.2017.8116013

Jin-Wei Shi, J. Sheu

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引用次数: 0

摘要

我们回顾了GaN高速led的研究进展。通过优化器件中的mqw结构，可以在所有可见led之间的POF上实现创纪录的高数据速率(5.5 Gbit/sec)。此外，还演示了用于室内VLC的高流明，高显色指数(95)和高速白光LED。

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The development of high-speed III-nitride based light-emitting diode for visible light and plastic optical fiber communications

We review our work on GaN high-speed LEDs. By optimizing MQWs structure in our device, record-high data rates (5.5 Gbit/sec) over POF among all visible LEDs can be achieved. Besides, a high-lumens, high-CRI (95), and high-speed white-light LED has been demonstrated for indoor VLC.

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2017 IEEE Photonics Conference (IPC) Part II

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