β-Ga2O3纳米线阵列的协同性能

IF 0.9 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY Physics and Chemistry of Solid State Pub Date : 2023-02-23 DOI:10.15330/pcss.24.1.56-63
M. Naumenko, R. Balabai
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引用次数: 0

摘要

利用电子密度泛函和从头算伪势的方法,计算了不同截面形状和位置的β-Ga2O3纳米线在阵列内的价电子密度、电子态密度和库仑势沿指定方向的空间分布。建立了导线阵列的协同特性。导线之间相互影响的程度取决于它们在阵列中相互位置的几何参数,从而确定导线阵列作为一个整体的电子特性。
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Synergistic properties of β-Ga2O3 nanowire arrays
Using the methods of electron density functional and ab initio pseudopotential, the spatial distributions of valence electron density, the density of electronic states and Coulomb potentials along the specified directions within the arrays of β-Ga2O3 nanowires with different cross-sectional shapes and positions in arrays were calculated. Synergistic properties of arrays of wires are established. The degree of influence of the wires on each other is determined depending on the geometric parameters of their mutual location in the array The electronic characteristics of the array of wires as a whole are determined.
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CiteScore
1.70
自引率
14.30%
发文量
83
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