半导体表面捕获多数载流子

Day 1 Mon, March 21, 2022 Pub Date : 1986-03-01 DOI:10.1002/PSSB.2221340138

R. A. Vardanyan, L. B. Khovakimyan

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引用次数: 1

摘要

用准经典近似计算了半导体表面的多数载流子捕获系数。表面的载流子局域化伴随着多量子波动声子发射。得到了捕获系数与温度的关系。[忽略俄语文本]。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Capture of Majority Carriers by a Semiconductor Surface

The coefficient of majority carrier capture by a semiconductor surface is calculated in quasi-classical approximation. The carrier localization on the surface is accompanied by multiquantum fluctuational phonon emission. The temperature dependence of the capture coefficient is obtained. [Russian Text Ignored].

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Day 1 Mon, March 21, 2022

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