{"title":"光辅助MOVPE制备氮化镓铟薄膜的物理性质","authors":"T. Nagatomo, O. Omoto","doi":"10.1051/JPHYSCOL:19955139","DOIUrl":null,"url":null,"abstract":"The optical and electrical properties, crystallinity, and photoluminescence of GaInN epitaxial films were remarkably improved by photo-assited MOVPE using ultraviolet (UV) light from a deuterium (D 2 ) lamp. The dissociation of NH 3 is promoted by irradiation with a D 2 lamp and indiun atoms are effectively incorporated into the crystal lattice of GaInN. Good-quality epitaxial GaInN films were obtained at higher growth temperature of 800°C increasing the now rate of trimethylindium (TMIn). The photoluminescence peak intensity (band-edge emission) of GaInN films grown at 800°C is 14 times as great as that of 675°C.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Physical Properties of Gallium Indium Nitride Films Prepared by Photo-Assisted MOVPE\",\"authors\":\"T. Nagatomo, O. Omoto\",\"doi\":\"10.1051/JPHYSCOL:19955139\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The optical and electrical properties, crystallinity, and photoluminescence of GaInN epitaxial films were remarkably improved by photo-assited MOVPE using ultraviolet (UV) light from a deuterium (D 2 ) lamp. The dissociation of NH 3 is promoted by irradiation with a D 2 lamp and indiun atoms are effectively incorporated into the crystal lattice of GaInN. Good-quality epitaxial GaInN films were obtained at higher growth temperature of 800°C increasing the now rate of trimethylindium (TMIn). The photoluminescence peak intensity (band-edge emission) of GaInN films grown at 800°C is 14 times as great as that of 675°C.\",\"PeriodicalId\":17944,\"journal\":{\"name\":\"Le Journal De Physique Colloques\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Le Journal De Physique Colloques\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1051/JPHYSCOL:19955139\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Le Journal De Physique Colloques","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1051/JPHYSCOL:19955139","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Physical Properties of Gallium Indium Nitride Films Prepared by Photo-Assisted MOVPE
The optical and electrical properties, crystallinity, and photoluminescence of GaInN epitaxial films were remarkably improved by photo-assited MOVPE using ultraviolet (UV) light from a deuterium (D 2 ) lamp. The dissociation of NH 3 is promoted by irradiation with a D 2 lamp and indiun atoms are effectively incorporated into the crystal lattice of GaInN. Good-quality epitaxial GaInN films were obtained at higher growth temperature of 800°C increasing the now rate of trimethylindium (TMIn). The photoluminescence peak intensity (band-edge emission) of GaInN films grown at 800°C is 14 times as great as that of 675°C.
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