基于单一记忆存储器的TTL NOT逻辑

IF 0.1 Q4 MULTIDISCIPLINARY SCIENCES Tecnologia en Marcha Pub Date : 2023-06-29 DOI:10.18845/tm.v36i6.6771
Hirakjyoti Choudhury, Suvankar Paul, Deepjyoti Deb, Prachuryya Subash Das, Rupam Goswami
{"title":"基于单一记忆存储器的TTL NOT逻辑","authors":"Hirakjyoti Choudhury, Suvankar Paul, Deepjyoti Deb, Prachuryya Subash Das, Rupam Goswami","doi":"10.18845/tm.v36i6.6771","DOIUrl":null,"url":null,"abstract":"This article presents a NOT logic gate circuit based on a single memristor, and analyzes it for different biological memristive samples based on extracted resistances. The simple resistorvoltage representation of the memristor in the logic circuit is used to formulate a methodology to tune the parameters of the circuit in accordance with TTL voltage values. The logic circuit consists of two resistors in series with the memristor. The input is connected to one end of the memristor, and the output is drawn across the series connection of the second resistor, and the memristor. The methodology comprises of two steps, where, in the first step, the logic ‘low’ TTLinput voltages are examined, and in the second step, the circuit is evaluated for logic ‘high’ TTLinput voltages. The methodology reveals that there is a mínimum voltage value of ‘high’ TTL-input beyond which the output does not fall within the logic ‘low’ TTL-output. The proposed technique may be extended to evaluate novel memristive materials for single memristor-based NOT logic.","PeriodicalId":42957,"journal":{"name":"Tecnologia en Marcha","volume":null,"pages":null},"PeriodicalIF":0.1000,"publicationDate":"2023-06-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Single Memristorbased TTL NOT logic\",\"authors\":\"Hirakjyoti Choudhury, Suvankar Paul, Deepjyoti Deb, Prachuryya Subash Das, Rupam Goswami\",\"doi\":\"10.18845/tm.v36i6.6771\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This article presents a NOT logic gate circuit based on a single memristor, and analyzes it for different biological memristive samples based on extracted resistances. The simple resistorvoltage representation of the memristor in the logic circuit is used to formulate a methodology to tune the parameters of the circuit in accordance with TTL voltage values. The logic circuit consists of two resistors in series with the memristor. The input is connected to one end of the memristor, and the output is drawn across the series connection of the second resistor, and the memristor. The methodology comprises of two steps, where, in the first step, the logic ‘low’ TTLinput voltages are examined, and in the second step, the circuit is evaluated for logic ‘high’ TTLinput voltages. The methodology reveals that there is a mínimum voltage value of ‘high’ TTL-input beyond which the output does not fall within the logic ‘low’ TTL-output. The proposed technique may be extended to evaluate novel memristive materials for single memristor-based NOT logic.\",\"PeriodicalId\":42957,\"journal\":{\"name\":\"Tecnologia en Marcha\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.1000,\"publicationDate\":\"2023-06-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Tecnologia en Marcha\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.18845/tm.v36i6.6771\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"MULTIDISCIPLINARY SCIENCES\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Tecnologia en Marcha","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.18845/tm.v36i6.6771","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"MULTIDISCIPLINARY SCIENCES","Score":null,"Total":0}
引用次数: 0

摘要

本文提出了一种基于单一忆阻器的非逻辑门电路,并在提取电阻的基础上对不同生物忆阻样品进行了分析。逻辑电路中忆阻器的简单电阻电压表示用于制定一种根据TTL电压值调整电路参数的方法。逻辑电路由两个电阻和忆阻器串联而成。输入端连接到忆阻器的一端,输出端穿过第二电阻和忆阻器的串联连接。该方法包括两个步骤,其中,在第一步中,检查逻辑“低”ttinput电压,在第二步中,评估电路的逻辑“高”ttinput电压。该方法表明,“高”ttl输入有一个mínimum电压值,超过该电压值,输出不属于逻辑“低”ttl输出。所提出的技术可以扩展到评估基于单忆阻器的非逻辑的新型忆阻材料。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
A Single Memristorbased TTL NOT logic
This article presents a NOT logic gate circuit based on a single memristor, and analyzes it for different biological memristive samples based on extracted resistances. The simple resistorvoltage representation of the memristor in the logic circuit is used to formulate a methodology to tune the parameters of the circuit in accordance with TTL voltage values. The logic circuit consists of two resistors in series with the memristor. The input is connected to one end of the memristor, and the output is drawn across the series connection of the second resistor, and the memristor. The methodology comprises of two steps, where, in the first step, the logic ‘low’ TTLinput voltages are examined, and in the second step, the circuit is evaluated for logic ‘high’ TTLinput voltages. The methodology reveals that there is a mínimum voltage value of ‘high’ TTL-input beyond which the output does not fall within the logic ‘low’ TTL-output. The proposed technique may be extended to evaluate novel memristive materials for single memristor-based NOT logic.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
Tecnologia en Marcha
Tecnologia en Marcha MULTIDISCIPLINARY SCIENCES-
自引率
0.00%
发文量
93
审稿时长
28 weeks
期刊最新文献
Gestión de Residuos en proyectos de construcción de viviendas en Costa Rica: teoría versus práctica Enseñanza del ordenamiento territorial como herramienta en la gestión de proyectos de obra pública Transferencia de conocimiento desde las universidades a las empresas Virtualidad en la enseñanza de investigación en la maestría en Gerencia de Proyectos del Tecnológico de Costa Rica Impacto de la metodología BIM en la gestión de proyectos de construcción
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1