V. Badikov, D. V. Badikov, G. Shevyrdyaeva, V. Laptev, A. A. Melnikov, S. Chekalin
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Optical and generation characteristics of new nonlinear Ba2Ga8GeS16 and Ba2Ga8(GeSe2)S14 crystals for the mid-IR range
Ba2Ga8GeS16 and Ba2Ga8(GeSe2)S14 single crystals of large size and good optical quality have been grown for the first time. Their linear optical characteristics – transmission spectra in the range of 0.3 – 25 μm, dispersion of principal refractive indices, and birefringence – have been measured. Irradiation of the crystals by 100-fs laser pulses with a wavelength of 8.3 μm initiated second-harmonic generation with an efficiency comparable with that obtained for the AgGaS2 crystal.
期刊介绍:
Quantum Electronics covers the following principal headings
Letters
Lasers
Active Media
Interaction of Laser Radiation with Matter
Laser Plasma
Nonlinear Optical Phenomena
Nanotechnologies
Quantum Electronic Devices
Optical Processing of Information
Fiber and Integrated Optics
Laser Applications in Technology and Metrology, Biology and Medicine.