考虑长期运行和劣化的交联聚乙烯电缆接头模型局部放电特性的时间变化

Nurcahyo Wibowo, Takafumi Mashimo, Toshihiro Takahashi, S. Suwarno
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引用次数: 1

摘要

预制型交联聚乙烯电缆终端的老化缺陷,即使在良好的安装工艺下,仍会出现在去应力锥(SRC)与交联聚乙烯绝缘的界面处,或SRC与环氧树脂插座的界面处。根据退役XLPE终端的拆解观察,老化缺陷即沉积可能是由于硅脂或硅油脱油,从SRC中渗出硫化添加剂等化学添加剂所致。这种缺陷在工作过程中由于热应力的作用,容易引发局部放电(PD)并形成分层,最终导致失效。本文利用空洞缺陷模型讨论了XLPE电缆终端的局部放电特性。然后,将掺钛酸钡的环氧树脂注入到SRC与XLPE电缆的界面,研究其局部放电特性。钛酸钡是铁电性能最高的材料之一,被认为是模拟时效镀层的合适材料。从脉冲数、最大电荷和PRPD模式等方面讨论了其放电特性。实验结果表明,钛酸钡层可以在观察过程中相对稳定的PD发生条件下影响SRC界面内部的电场行为,特别是在SRC的半导体和绝缘边界区域。
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Temporal Transition of Partial Discharge Characteristics in XLPE Cable Joint Model Taking Account of Long-Term Operation and Deterioration
The aging defect in the pre-fabrication type XLPE cable termination still can appear at the interface between the stress-relief cone (SRC) and XLPE insulation, or the interface between SRC and the epoxy resin receptacle, even in a good installation process. It is also reported that the aging defect, i.e., deposits would be due to the deoiling of the silicone grease or oil, exuding chemical additives such as vulcanizing additives from SRC, from dismantlement observation of the decommissioned XLPE terminations. Such defects might easily ignite partial discharge (PD) combined with the formation of the delamination due to the thermal stress under its operation and finally lead to failure. In this paper, PD characteristics are discussed for the XLPE cable termination using void defect model. Then, an epoxy resin mixed with barium titanate is injected to the interface of the SRC and the XLPE cable, and its PD characteristics are investigated. Barium titanate is one of the highest ferroelectric materials and considered to be a suitable material to simulate the aging deposit. The PD characteristics are discussed from viewpoints of the number of pulses, maximum charge and PRPD pattern. From the experiment, it is revealed that barium titanate layer can affect electric field behaviour inside the SRC interface with the relatively stable condition of PD occurrence during observation, especially in the border area of semiconductive and insulation of the SRC.
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