igbt的非状态负栅电压要求评估

PESC Record. 27th Annual IEEE Power Electronics Specialists Conference Pub Date : 1996-06-23 DOI:10.1109/PESC.1996.548646

N. McNeill, S. Finney, B. Williams

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引用次数: 27

摘要

本文解决了IGBT器件在关闭状态时经历dv/dt的负栅极偏置的需求。考虑的因素包括门偏置电压、门阻抗、再施加的dv/dt和外壳温度。高压大电流IGBT的实验结果支持这些因素的评估。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Assessment of off-state negative gate voltage requirements for IGBTs

This paper addresses the need for negative gate bias with IGBT devices that experience a dv/dt when in the off-state. Factors considered include gate bias voltage, gate impedance, reapplied dv/dt and case temperature. Experimental results for a high-voltage high-current IGBT support the assessment of these factors.

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PESC Record. 27th Annual IEEE Power Electronics Specialists Conference

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