多孔硅的整体特征及其分类

A. M. Khort, A. G. Yakovenko, Yury V. Syrov
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引用次数: 0

摘要

多孔硅是目前研究最多的材料之一,它既用于传统的硅材料领域,如电子学和光电子学,也用于完全非常规的领域,如催化、能量学、生物学和医学。由于其结构可以根据初始硅的性质和获得多孔相的方法而完全不同,因此揭示了材料的多种可能性。任何材料的使用都不可避免地需要对其各种形式进行分类。本文的目的是寻找最显著的参数,可作为多孔硅分类的依据。历史上,IUPAC孔径分类定义的术语已被用于对多孔硅进行分类。由于IUPAC的权威性,许多研究者认为这个术语是最成功和最重要的,径向孔径通常被视为包含多孔硅最重要性质的主要参数。同时,多孔硅的独特性能和实际应用是基于其发达的内表面。在科学文献中,通常采用氮孔隙度法测定该数值,该方法在实际实施中比较简单。无论多孔硅的结构和形态如何,最适合用于多孔硅分类的积分参数是总比内表面(cm-1),它可以相对容易地通过实验建立,并且对多孔硅的几乎所有应用都具有重要的基础意义。使用此值并不排除使用其他参数进行更详细的分类
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An integral feature of porous silicon and its classification
Porous silicon is currently one of the most studied materials which is used both in the areas traditional for silicon, such as electronics and optoelectronics, and in completely unconventional ones, such as catalysis, energetics, biology, and medicine. The multiple possibilities of the material are revealed due to the fact that its structure can be radically different depending on the properties of the initial silicon and the methods of obtaining porous phases. The use of any material inevitably leads to the need to classify its various forms. The purpose of the article was to find the most significant parameter that can be used as the basis for the classification of porous silicon.Historically, the terminology defined by the IUPAC pore size classification has been used to classify porous silicon. Due to the authority of IUPAC, many researchers have considered this terminology to be the most successful and important, and the radial pore size has often been regarded as a main parameter containing the most important properties of porous silicon. Meanwhile, the unique properties and practical application of porous silicon are based on its developed inner surface. The method of nitrogen porosimetry, which is simple in its practical implementation, is often used in scientific literature to determine this value.The most suitable integral parameter for the classification of porous silicon, regardless of its structure and morphology, is the total specific internal surface (cm-1) that can be relatively easily established experimentally and is of fundamental importance for almost all applications of porous silicon. The use of this value does not exclude the use of other parameters for a more detailed classification
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