一种包含局部互连的逻辑自修复方案

T. Koal, Daniel Scheit, H. Vierhaus
{"title":"一种包含局部互连的逻辑自修复方案","authors":"T. Koal, Daniel Scheit, H. Vierhaus","doi":"10.1109/DDECS.2009.5012088","DOIUrl":null,"url":null,"abstract":"Technology forecasts concerning the development of CMOS technologies predict a higher level of intermittent faults due to radiation effects, but also a higher density of permanent fault effects due to inevitable parameter shifts and higher stress factors. For high production yield and long-term dependable operation, mechanisms of built-in self repair that can be used after production test and in the field of application are becoming a must. The architecture introduced in this paper includes mechanisms for logic self repair that may also cover local interconnects.","PeriodicalId":6325,"journal":{"name":"2009 12th International Symposium on Design and Diagnostics of Electronic Circuits & Systems","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2009-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"A scheme of logic self repair including local interconnects\",\"authors\":\"T. Koal, Daniel Scheit, H. Vierhaus\",\"doi\":\"10.1109/DDECS.2009.5012088\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Technology forecasts concerning the development of CMOS technologies predict a higher level of intermittent faults due to radiation effects, but also a higher density of permanent fault effects due to inevitable parameter shifts and higher stress factors. For high production yield and long-term dependable operation, mechanisms of built-in self repair that can be used after production test and in the field of application are becoming a must. The architecture introduced in this paper includes mechanisms for logic self repair that may also cover local interconnects.\",\"PeriodicalId\":6325,\"journal\":{\"name\":\"2009 12th International Symposium on Design and Diagnostics of Electronic Circuits & Systems\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-04-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 12th International Symposium on Design and Diagnostics of Electronic Circuits & Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DDECS.2009.5012088\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 12th International Symposium on Design and Diagnostics of Electronic Circuits & Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DDECS.2009.5012088","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

摘要

关于CMOS技术发展的技术预测预测,由于辐射效应,间歇性故障的水平会更高,但由于不可避免的参数变化和更高的应力因子,永久性故障的密度也会更高。为了实现高产量和长期可靠运行,在生产试验后和应用现场都能使用的内置自修复机制成为必须。本文介绍的体系结构包括逻辑自修复机制,也可以覆盖本地互连。
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A scheme of logic self repair including local interconnects
Technology forecasts concerning the development of CMOS technologies predict a higher level of intermittent faults due to radiation effects, but also a higher density of permanent fault effects due to inevitable parameter shifts and higher stress factors. For high production yield and long-term dependable operation, mechanisms of built-in self repair that can be used after production test and in the field of application are becoming a must. The architecture introduced in this paper includes mechanisms for logic self repair that may also cover local interconnects.
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