纳米界面系统对光和电压偏置响应的理论研究

K. Iida
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摘要

由纳米材料组成的非均相系统(以下简称纳米界面系统)在电池、光电催化剂、太阳能电池和光电子器件等领域得到了广泛的研究。为了有效地设计这些功能材料,需要在原子尺度上深入了解对光和电压偏置的响应机制。然而,由于两个问题,光和电压偏置下纳米界面系统的第一性原理理论研究很少进行。首先,用第一性原理计算方法计算纳米界面系统需要巨大的计算成本。其次,考虑到光和电压偏置,很难从理论上明确地描述电子结构。本文综述了近年来纳米界面系统的理论和计算研究进展。利用第一性原理计算方法模拟了各种系统的光学响应,如金硫酸盐纳米团簇和MoS 2 -石墨烯异质结构,以进行光激发电子动力学的大规模并行计算。用理论公式对计算结果进行了分析,揭示了界面区域在光学响应中的作用。我们还开发了一种研究电极系统的原始理论方法。该方法用于阐明施加偏置电压导致电子充电并产生栅极电场的纳米界面系统中固有电子结构变化的机理。
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Theoretical Study on Response of Nanointerface Systems to Light and Voltage Bias
Heterogeneous systems consisting with nanomaterials (hereafter referred to as nanointerface systems) are exten-sively investigated in relation to interests in batteries, photo-and electro-catalysts, solar cells, and optoelectronic devices. To efficiently design these functional materials, it is required to obtain atomic-scale insights into the response mechanism to light and voltage bias. However, first-principles theoretical studies on nanointerface systems under light and voltage bias have been scarcely performed because of two problems. Firstly, a huge computational cost is needed to calculate a nanointerface system with a first-principles computational method. Secondly, it is difficult to theoretically describe electronic structure explicitly considering light and voltage bias. In this review, we report the recent progress in our theoretical and computational studies on nanointerface systems. The optical response of various systems such as a gold-thiolate nanocluster and a MoS 2 -graphene heterostructure has been simulated using a first-principles computational method for carrying out massively parallel calculations of photoexcited electron dynamics. The computational results have been analyzed with theoretical formulas for revealing the role of the interface region in the optical response. We have also developed an original theoretical method for investigating electrode systems. The developed method has been used to elucidate the mechanism of the electronic structure change inherent in nanointerface systems by applying bias voltage, which causes the electronic charging and generates the electric field from a gate electrode.
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