{"title":"原子层沉积反应器中前驱体流动与沉积的模拟","authors":"H. Siimon, J. Aarik","doi":"10.1051/JPHYSCOL:1995528","DOIUrl":null,"url":null,"abstract":"A calculation model to study atomic layer deposition (ALD) in low-pressure channel-type CVD reactor with many parallel substrates is described. The calculations are based on continuity equation and kinetic equation for surface coverage. Formation of a steady-state adsorption wave propagating between the substrates during a precursor pulse is studied. The effect of diffusion and sticking coefficients, carrier gas flow rate and growth temperature on formation and propagation of the steady-state adsorption wave is analyzed.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"78 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Modelling of Precursor Flow and Deposition in Atomic Layer Deposition Reactor\",\"authors\":\"H. Siimon, J. Aarik\",\"doi\":\"10.1051/JPHYSCOL:1995528\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A calculation model to study atomic layer deposition (ALD) in low-pressure channel-type CVD reactor with many parallel substrates is described. The calculations are based on continuity equation and kinetic equation for surface coverage. Formation of a steady-state adsorption wave propagating between the substrates during a precursor pulse is studied. The effect of diffusion and sticking coefficients, carrier gas flow rate and growth temperature on formation and propagation of the steady-state adsorption wave is analyzed.\",\"PeriodicalId\":17944,\"journal\":{\"name\":\"Le Journal De Physique Colloques\",\"volume\":\"78 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Le Journal De Physique Colloques\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1051/JPHYSCOL:1995528\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Le Journal De Physique Colloques","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1051/JPHYSCOL:1995528","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Modelling of Precursor Flow and Deposition in Atomic Layer Deposition Reactor
A calculation model to study atomic layer deposition (ALD) in low-pressure channel-type CVD reactor with many parallel substrates is described. The calculations are based on continuity equation and kinetic equation for surface coverage. Formation of a steady-state adsorption wave propagating between the substrates during a precursor pulse is studied. The effect of diffusion and sticking coefficients, carrier gas flow rate and growth temperature on formation and propagation of the steady-state adsorption wave is analyzed.
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