D. Morgan, H. Thomas, W. Anderson, P. Thompson, A. Christou, D. Diskett
{"title":"GaAs器件加工中的高温金属化","authors":"D. Morgan, H. Thomas, W. Anderson, P. Thompson, A. Christou, D. Diskett","doi":"10.1002/PSSA.2211100226","DOIUrl":null,"url":null,"abstract":"A study is made of the thermal stability of a range of refractory metals and their silicides on GaAs. Particular emphasis is laid on the effects of transient annealing with temperatures up to 1050 °C. Using the technique of Rutherford backscattering the results for the metallisation systems Ta, W, TaSix, WSix, and VSix are compared and indicate the superior properties of the refractory silicides. \n \n \n \nDie thermische Stabilitat einer Reihe von schwer schmelzbaren Metallen und ihrer Silizide auf GaAs wird untersucht. Insbesondere die Einflusse von nichtstationarer Temperung bei Temperaturen bis zu 1050 °C. Mit der Rutherfordruckstreutechnik werden die Ergebnisse fur die Metallisationssysteme Ta, W, TaSix, WSix und VSix verglichen und zeigen die uberlegenen Eigenschaften der schwer schmelzbaren Metallsilizide.","PeriodicalId":90917,"journal":{"name":"Machine learning and interpretation in neuroimaging : international workshop, MLINI 2011, held at NIPS 2011, Sierra Nevada, Spain, December 16-17, 2011 : revised selected and invited contributions. MLINI (Workshop) (2011 : Sierra Nevada...","volume":"57 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"1988-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"High Temperature Metallisation for GaAs Device Processing\",\"authors\":\"D. Morgan, H. Thomas, W. Anderson, P. Thompson, A. Christou, D. Diskett\",\"doi\":\"10.1002/PSSA.2211100226\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A study is made of the thermal stability of a range of refractory metals and their silicides on GaAs. Particular emphasis is laid on the effects of transient annealing with temperatures up to 1050 °C. Using the technique of Rutherford backscattering the results for the metallisation systems Ta, W, TaSix, WSix, and VSix are compared and indicate the superior properties of the refractory silicides. \\n \\n \\n \\nDie thermische Stabilitat einer Reihe von schwer schmelzbaren Metallen und ihrer Silizide auf GaAs wird untersucht. Insbesondere die Einflusse von nichtstationarer Temperung bei Temperaturen bis zu 1050 °C. Mit der Rutherfordruckstreutechnik werden die Ergebnisse fur die Metallisationssysteme Ta, W, TaSix, WSix und VSix verglichen und zeigen die uberlegenen Eigenschaften der schwer schmelzbaren Metallsilizide.\",\"PeriodicalId\":90917,\"journal\":{\"name\":\"Machine learning and interpretation in neuroimaging : international workshop, MLINI 2011, held at NIPS 2011, Sierra Nevada, Spain, December 16-17, 2011 : revised selected and invited contributions. MLINI (Workshop) (2011 : Sierra Nevada...\",\"volume\":\"57 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1988-12-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Machine learning and interpretation in neuroimaging : international workshop, MLINI 2011, held at NIPS 2011, Sierra Nevada, Spain, December 16-17, 2011 : revised selected and invited contributions. MLINI (Workshop) (2011 : Sierra Nevada...\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1002/PSSA.2211100226\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Machine learning and interpretation in neuroimaging : international workshop, MLINI 2011, held at NIPS 2011, Sierra Nevada, Spain, December 16-17, 2011 : revised selected and invited contributions. MLINI (Workshop) (2011 : Sierra Nevada...","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1002/PSSA.2211100226","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High Temperature Metallisation for GaAs Device Processing
A study is made of the thermal stability of a range of refractory metals and their silicides on GaAs. Particular emphasis is laid on the effects of transient annealing with temperatures up to 1050 °C. Using the technique of Rutherford backscattering the results for the metallisation systems Ta, W, TaSix, WSix, and VSix are compared and indicate the superior properties of the refractory silicides.
Die thermische Stabilitat einer Reihe von schwer schmelzbaren Metallen und ihrer Silizide auf GaAs wird untersucht. Insbesondere die Einflusse von nichtstationarer Temperung bei Temperaturen bis zu 1050 °C. Mit der Rutherfordruckstreutechnik werden die Ergebnisse fur die Metallisationssysteme Ta, W, TaSix, WSix und VSix verglichen und zeigen die uberlegenen Eigenschaften der schwer schmelzbaren Metallsilizide.
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