{"title":"基于纠错码的Flash编码方案","authors":"Qin Huang, Shu Lin, K. Abdel-Ghaffar","doi":"10.1109/GLOCOM.2010.5683364","DOIUrl":null,"url":null,"abstract":"Flash memory is a non-volatile computer storage device which consists of blocks of cells. While increasing the voltage level of a single cell is fast and simple, reducing the level of a cell requires the erasing of the entire block containing the cell. Since block erasures are costly, traditional flash coding schemes have been developed to maximize the number of writes before a block erasure is needed. A novel coding scheme based on error-correcting codes allows the cell levels to increase as evenly as possibly and as a result, increases the number of writes before a block erasure. The scheme is also capable of combating noise in flash memories in order to enhance data reliability.","PeriodicalId":6448,"journal":{"name":"2010 IEEE Global Telecommunications Conference GLOBECOM 2010","volume":"10 1","pages":"1-6"},"PeriodicalIF":0.0000,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Flash Coding Scheme Based on Error-Correcting Codes\",\"authors\":\"Qin Huang, Shu Lin, K. Abdel-Ghaffar\",\"doi\":\"10.1109/GLOCOM.2010.5683364\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Flash memory is a non-volatile computer storage device which consists of blocks of cells. While increasing the voltage level of a single cell is fast and simple, reducing the level of a cell requires the erasing of the entire block containing the cell. Since block erasures are costly, traditional flash coding schemes have been developed to maximize the number of writes before a block erasure is needed. A novel coding scheme based on error-correcting codes allows the cell levels to increase as evenly as possibly and as a result, increases the number of writes before a block erasure. The scheme is also capable of combating noise in flash memories in order to enhance data reliability.\",\"PeriodicalId\":6448,\"journal\":{\"name\":\"2010 IEEE Global Telecommunications Conference GLOBECOM 2010\",\"volume\":\"10 1\",\"pages\":\"1-6\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 IEEE Global Telecommunications Conference GLOBECOM 2010\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GLOCOM.2010.5683364\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE Global Telecommunications Conference GLOBECOM 2010","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GLOCOM.2010.5683364","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Flash Coding Scheme Based on Error-Correcting Codes
Flash memory is a non-volatile computer storage device which consists of blocks of cells. While increasing the voltage level of a single cell is fast and simple, reducing the level of a cell requires the erasing of the entire block containing the cell. Since block erasures are costly, traditional flash coding schemes have been developed to maximize the number of writes before a block erasure is needed. A novel coding scheme based on error-correcting codes allows the cell levels to increase as evenly as possibly and as a result, increases the number of writes before a block erasure. The scheme is also capable of combating noise in flash memories in order to enhance data reliability.
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