用氟化法裁剪类石墨烯体系的能带隙

Aparna V. Nair, B. Manoj
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引用次数: 1

摘要

氟化石墨烯具有宽带隙的二维层状结构。在本研究中,以氧化石墨烯(GO)为原料,在二乙胺硫三氟化(DAST)的辅助下进行脱氧氟化反应,得到氟石墨烯(FG)。FT-IR在1216 cm-1处出现峰值,1312 cm-1处出现肩峰,分别归因于共价C-F键和C-F2键的拉伸振动。表面形貌显示氧化石墨烯为叶状结构,FG为岩石结构。能谱分析证实了石墨结构的氟化。透射电镜分析证实了石墨烯和碳点混合结构的形成。氧化石墨烯和氟石墨烯的结构、形态和电学性质的结果表明,这些样品在未来有可能用作电子/电化学器件。
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Tailoring of Energy Band Gap inGraphene-like System by Fluorination
Fluorinated grapheme has a two-dimensional layer structure with a wide band gap. In the present study, Fluoro Graphene (FG) is obtained from Graphene Oxide (GO) through a deoxyfluorination reaction with the aid of Diethylaminosulphurtrifluoride (DAST). The FT-IR exhibited a peak at 1216 cm-1 and the shoulder at 1312 cm-1 were ascribed to the stretching vibration of covalent C–F bonds and C–F2 bonds, respectively. Surface morphology revealed a leafy structure in GO and a rocky structure in FG. The EDS analysis confirmed the fluorination of the graphitic structure. The TEM analysis confirmed the formation of a mixed structure of graphene and carbon dots. The results of structural, morphological and electrical properties of both graphene oxide and fluorographene show the possibility of using these samples as electronic/electrochemical devices in future.
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