{"title":"用D2标记实验确定了GaAs在OMVPE生长中的反应机制","authors":"G.B. Stringfellow","doi":"10.1016/0146-3535(89)90017-8","DOIUrl":null,"url":null,"abstract":"<div><p>Reaction mechanisms in the organometallic vapor phase epitaxial (OMVPE) growth of GaAs using TMGa combined with either AsH<sub>3</sub> or tertiarybutylarsine (TBAs) are reviewed. The pyrolysis of each constituent in various ambients is discussed followed by a discussion of the combined systems used for actual GaAs growth.</p></div>","PeriodicalId":101046,"journal":{"name":"Progress in Crystal Growth and Characterization","volume":"19 1","pages":"Pages 115-123"},"PeriodicalIF":0.0000,"publicationDate":"1989-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0146-3535(89)90017-8","citationCount":"6","resultStr":"{\"title\":\"Reaction mechanisms in OMVPE growth of GaAs determined using D2 labelling experiments\",\"authors\":\"G.B. Stringfellow\",\"doi\":\"10.1016/0146-3535(89)90017-8\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Reaction mechanisms in the organometallic vapor phase epitaxial (OMVPE) growth of GaAs using TMGa combined with either AsH<sub>3</sub> or tertiarybutylarsine (TBAs) are reviewed. The pyrolysis of each constituent in various ambients is discussed followed by a discussion of the combined systems used for actual GaAs growth.</p></div>\",\"PeriodicalId\":101046,\"journal\":{\"name\":\"Progress in Crystal Growth and Characterization\",\"volume\":\"19 1\",\"pages\":\"Pages 115-123\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1989-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1016/0146-3535(89)90017-8\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Progress in Crystal Growth and Characterization\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/0146353589900178\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Progress in Crystal Growth and Characterization","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/0146353589900178","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Reaction mechanisms in OMVPE growth of GaAs determined using D2 labelling experiments
Reaction mechanisms in the organometallic vapor phase epitaxial (OMVPE) growth of GaAs using TMGa combined with either AsH3 or tertiarybutylarsine (TBAs) are reviewed. The pyrolysis of each constituent in various ambients is discussed followed by a discussion of the combined systems used for actual GaAs growth.
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