弯曲晶体中质子通道追赶的计算机模拟

Day 1 Wed, February 23, 2022 Pub Date : 1986-02-01 DOI:10.1002/PSSB.2221330210

A. Taratin, S. A. Vorobiev

{"title":"弯曲晶体中质子通道追赶的计算机模拟","authors":"A. Taratin, S. A. Vorobiev","doi":"10.1002/PSSB.2221330210","DOIUrl":null,"url":null,"abstract":"A detailed computer simulation of the catch-up effect for a 1 GeV proton beam in a uniformly bent silicon crystal is performed. The dependences of the efficiency of proton catch-up in the channeling regime on bending radius of the crystal and on incidence angle of the beam are reported. \n \n \n \n[Russian Text Ignored].","PeriodicalId":10913,"journal":{"name":"Day 1 Wed, February 23, 2022","volume":"22 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"1986-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Computer Simulation of Proton Channeling Catch-Up in Bent Crystals\",\"authors\":\"A. Taratin, S. A. Vorobiev\",\"doi\":\"10.1002/PSSB.2221330210\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A detailed computer simulation of the catch-up effect for a 1 GeV proton beam in a uniformly bent silicon crystal is performed. The dependences of the efficiency of proton catch-up in the channeling regime on bending radius of the crystal and on incidence angle of the beam are reported. \\n \\n \\n \\n[Russian Text Ignored].\",\"PeriodicalId\":10913,\"journal\":{\"name\":\"Day 1 Wed, February 23, 2022\",\"volume\":\"22 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1986-02-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Day 1 Wed, February 23, 2022\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1002/PSSB.2221330210\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Day 1 Wed, February 23, 2022","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1002/PSSB.2221330210","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

对均匀弯曲硅晶体中1 GeV质子束的追赶效应进行了详细的计算机模拟。本文报道了质子追赶效率与晶体弯曲半径和光束入射角的关系。[忽略俄语文本]。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Computer Simulation of Proton Channeling Catch-Up in Bent Crystals

A detailed computer simulation of the catch-up effect for a 1 GeV proton beam in a uniformly bent silicon crystal is performed. The dependences of the efficiency of proton catch-up in the channeling regime on bending radius of the crystal and on incidence angle of the beam are reported. [Russian Text Ignored].

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Day 1 Wed, February 23, 2022

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