P. Sai, D. But, K. Nowakowski-Szkudlarek, J. Przybytek, P. Prystawko, I. Yahniuk, P. Wiśniewski, B. Stonio, M. Słowikowski, S. Rumyantsev, W. Knap, G. Cywiński
{"title":"基于横向肖特基势垒闸的A1GaN/GaN场效应晶体管作为毫米波探测器","authors":"P. Sai, D. But, K. Nowakowski-Szkudlarek, J. Przybytek, P. Prystawko, I. Yahniuk, P. Wiśniewski, B. Stonio, M. Słowikowski, S. Rumyantsev, W. Knap, G. Cywiński","doi":"10.1109/IRMMW-THZ.2018.8510420","DOIUrl":null,"url":null,"abstract":"We report on comparison studies between a novel transistor like device and two dimensional Fin Field-Effect transistor towards their applications in a terahertz resonant detector. Both device structures have been fabricated on the same wafer of GaN/AIGaN epistructure during one processing run. The proposed here the transistor-like structure has two side Schottky gates, which can be biased towards complete pinch-off the 2DEG channel in this device. At certain conditions, near to pinch-off region, it is possible to obtain one dimensional current flow. This feature is especially attractive for THz resonant detector approach, which will be discussed in details.","PeriodicalId":6653,"journal":{"name":"2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)","volume":"46 1","pages":"1-2"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A1GaN/GaN Field Effect Transistors Based on Lateral Schottky Barrier Gates as Millimeter Wave Detectors\",\"authors\":\"P. Sai, D. But, K. Nowakowski-Szkudlarek, J. Przybytek, P. Prystawko, I. Yahniuk, P. Wiśniewski, B. Stonio, M. Słowikowski, S. Rumyantsev, W. Knap, G. Cywiński\",\"doi\":\"10.1109/IRMMW-THZ.2018.8510420\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report on comparison studies between a novel transistor like device and two dimensional Fin Field-Effect transistor towards their applications in a terahertz resonant detector. Both device structures have been fabricated on the same wafer of GaN/AIGaN epistructure during one processing run. The proposed here the transistor-like structure has two side Schottky gates, which can be biased towards complete pinch-off the 2DEG channel in this device. At certain conditions, near to pinch-off region, it is possible to obtain one dimensional current flow. This feature is especially attractive for THz resonant detector approach, which will be discussed in details.\",\"PeriodicalId\":6653,\"journal\":{\"name\":\"2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)\",\"volume\":\"46 1\",\"pages\":\"1-2\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRMMW-THZ.2018.8510420\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRMMW-THZ.2018.8510420","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A1GaN/GaN Field Effect Transistors Based on Lateral Schottky Barrier Gates as Millimeter Wave Detectors
We report on comparison studies between a novel transistor like device and two dimensional Fin Field-Effect transistor towards their applications in a terahertz resonant detector. Both device structures have been fabricated on the same wafer of GaN/AIGaN epistructure during one processing run. The proposed here the transistor-like structure has two side Schottky gates, which can be biased towards complete pinch-off the 2DEG channel in this device. At certain conditions, near to pinch-off region, it is possible to obtain one dimensional current flow. This feature is especially attractive for THz resonant detector approach, which will be discussed in details.
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